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STMicroelectronics STD110N8F6 MOSFET N-CH 80V 80A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD110N8F6	Digi-Reel	2,374		1	1 $2.46 10 $1.58 100 $2.46 1000 $0.79637 10000 $0.79637	Buy Now
	STD110N8F6	Cut Tape	2,374		1	1 $2.46 10 $1.58 100 $2.46 1000 $0.79637 10000 $0.79637	Buy Now
	STD110N8F6	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.69675	Buy Now
Avnet Americas	STD110N8F6	Reel		26 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.67157	Buy Now
Mouser Electronics	STD110N8F6		13,208			1 $1.41 10 $1.1 100 $0.876 1000 $0.746 10000 $0.679	Buy Now
Verical	STD110N8F6		2,445		9	1 - 10 $0.7148 100 $0.7148 1000 $0.7148 10000 $0.7148	Buy Now
Arrow Electronics	STD110N8F6	Cut Strips	2,445	26 Weeks	1	1 $0.8168 10 $0.7609 100 $0.7461 1000 $0.7148 10000 $0.7148	Buy Now

Newark	STD110N8F6	Cut Tape	1,848		1	1 $1.79 10 $1.51 100 $1.23 1000 $0.93 10000 $0.93	Buy Now
STMicroelectronics	STD110N8F6		13,208		1	1 $1.43 10 $1.12 100 $0.87 1000 $0.76 10000 $0.76	Buy Now
Avnet Silica	STD110N8F6		2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STD110N8F6			27 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STD110N8F6		101,040			1 - 10 - 100 $0.922 1000 $0.7139 10000 $0.7139	Buy Now
Visual Communications Company STD_110_BLK LED HOLDER TRI-LEAD - BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD_110_BLK	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi STD110N02RT4G MOSFET N-CH 24V 32A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD110N02RT4G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	STD110N02RT4G	Digi-Reel			1	1 $1.16 10 $1.16 100 $1.16 1000 $1.16 10000 $1.16	Buy Now
	STD110N02RT4G	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STD110NH02LT4 MOSFET N-CH 24V 80A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD110NH02LT4	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.05	Buy Now
onsemi STD110N02RT4G-VF01 MOSFET N-CH 24V 32A/110A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD110N02RT4G-VF01	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	STD110N02RT4G-VF01	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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STD110 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
STD110	Samsung Electronics	0.25um 2.5V CMOS Standard Cell Library for Pure Logic Products	Original	PDF
STD110	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
STD110 ASIC	Samsung Electronics	PLL 2013X	Original	PDF
STD110 ASIC	Samsung Electronics	Characteristics	Original	PDF
STD110 ASIC	Samsung Electronics	Book Contents	Original	PDF
STD110 ASIC	Samsung Electronics	About SEC ASIC	Original	PDF
STD110 ASIC	Samsung Electronics	Introduction	Original	PDF
STD_110_BLK	Visual Communications Company	LEDs - Spacers, Standoffs, Optoelectronics, LED HDWR STANDOFF 3MM/5MM BLACK	Original	PDF
STD110N02RT4G	On Semiconductor	STD110N02 - TRANSISTOR POWER, FET, FET General Purpose Power	Original	PDF
STD110N02RT4G-VF01	ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 24V 32A DPAK	Original	PDF
STD110N8F6	STMicroelectronics	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 80A DPAK	Original	PDF
STD110NH02L	STMicroelectronics	N-CHANNEL 24V - 0.0044 ? - 80A DPAK STRIPFET II	Original	PDF
STD110NH02L	STMicroelectronics	N-Channel 24 V - 0.0044 ohm - 80 A DPAK STripFET III Power MOSFET	Original	PDF
STD110NH02L	STMicroelectronics	N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET	Original	PDF

STD110NH02LT4	STMicroelectronics	N-channel 24V - 0.0044" - 80A - DPAK STripFET III Power MOSFET	Original	PDF
STD110NH02LT4	STMicroelectronics	N-CHANNEL 24V - 0.0044 ? - 80A DPAK STRIPFET III POWER MOSFET	Original	PDF
STD110NH02LT4	STMicroelectronics	N-Channel 24 V - 0.0044 ohm - 80 A DPAK STripFET III Power MOSFET	Original	PDF

STD110 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
dl2d Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2 Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	PDF	MDL110 STD110 PLL2013X dl2d AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
Untitled Abstract: No abstract text available Text: STD110NH02L N-channel 24V - 0.0044Ω - 80A - DPAK STripFET III Power MOSFET General features Type VDSSS RDS on ID STD110NH02L 24V <0.0048Ω 80A(1) 3 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced	Original	PDF	STD110NH02L STD110NH02LT4
inverter PURE SINE WAVE schematic diagram Abstract: sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	PDF	MDL110 STD110 inverter PURE SINE WAVE schematic diagram sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor
110n2g Abstract: STD110N02R Text: NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R, STD110N02R NTD110N02R/D 110n2g STD110N02R
D110NH02L Abstract: JESD97 STD110NH02L STD110NH02LT4 Text: STD110NH02L N-channel 24V - 0.0044Ω - 80A - DPAK STripFET III Power MOSFET General features Type VDSSS RDS on ID STD110NH02L 24V <0.0048Ω 80A(1) 3 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced	Original	PDF	STD110NH02L STD110NH02LT4 D110NHand D110NH02L JESD97 STD110NH02L STD110NH02LT4
STD110NH02L Abstract: No abstract text available Text: STD110NH02L N-CHANNEL 24V - 0.0044 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.005 Ω 80 A(2) TYPICAL RDS(on) = 0.0044 Ω @ 10 V TYPICAL RDS(on) = 0.0056 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK	Original	PDF	STD110NH02L O-252) O-252 STD110NH02L
Untitled Abstract: No abstract text available Text: STD110NH02L N-CHANNEL 20V - 0.004 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.005 Ω 80 A(#) TYPICAL RDS(on) = 0.004 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED	Original	PDF	STD110NH02L O-252) O-252 STD110NH02L
STD1109T-102M Abstract: HP42841A STD1109T-390M-B-N STD1109T-180M-B-N Text: SMD Unshielded Power Inductors – STD1109 Series Electrical Characteristics Inductance µH 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1000 1200 Part Number STD1109T-100M-B-N STD1109T-120M-B-N STD1109T-150M-B-N STD1109T-180M-B-N	Original	PDF	STD1109 STD1109T-100M-B-N STD1109T-120M-B-N STD1109T-150M-B-N STD1109T-180M-B-N STD1109T-220M-B-N STD1109T-270M-B-N STD1109T-330M-B-N STD1109T-390M-B-N STD1109T-470M-B-N STD1109T-102M HP42841A STD1109T-390M-B-N STD1109T-180M-B-N
Untitled Abstract: No abstract text available Text: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors STD1109 Series Yageo SMD power inductors are best designed for noise / EMI / RFI filters for surface mounting applications. These components contain tremendous electrode straight, solder heat resistance and outstanding	Original	PDF	STD1109 1000Hrs. 24Hrs.
Untitled Abstract: No abstract text available Text: STD110NH02L N-CHANNEL 20V - 0.004 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.005 Ω 80 A(#) TYPICAL RDS(on) = 0.004 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED	Original	PDF	STD110NH02L O-252) O-252 STD110NH02L
STD110NH02LT4 Abstract: D110NH02L STD110NH02L Text: STD110NH02L N-CHANNEL 24V - 0.0044 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.005 Ω 80 A(2) TYPICAL RDS(on) = 0.0044 Ω @ 10 V TYPICAL RDS(on) = 0.0056 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK	Original	PDF	STD110NH02L O-252) O-252 STD110NH02L STD110NH02LT4 D110NH02L
110n2g Abstract: STD110N02RT4G STD110N02R 110N2 T110N2G Text: NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	PDF	NTD110N02R, STD110N02R NTD110N02R/D 110n2g STD110N02RT4G 110N2 T110N2G
Untitled Abstract: No abstract text available Text: YAGEO CORPORATION SMD INDUCTOR / BEADS STD1109 Series SMD Power Inductors Yageo SMD power inductors are best designed for noise / EMI / RFI filters for surface mounting applications. These components contain tremendous electrode straight, solder heat resistance and outstanding	Original	PDF	STD1109 20Transition 24Hrs. 1000Hrs.
PURE SINE WAVE inverter schematic diagram Abstract: sine wave inverter schematic IVT HS 400 inverter PURE SINE WAVE schematic diagram microcontroller 1 phase pure sine wave inverter 1 phase pure sine wave inverter schematic OA32 diode 4558 opamp schematic 13001 TRANSISTOR grid tie inverters circuit diagrams wallace-tree VERILOG Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	PDF	MDL110 STD110 PURE SINE WAVE inverter schematic diagram sine wave inverter schematic IVT HS 400 inverter PURE SINE WAVE schematic diagram microcontroller 1 phase pure sine wave inverter 1 phase pure sine wave inverter schematic OA32 diode 4558 opamp schematic 13001 TRANSISTOR grid tie inverters circuit diagrams wallace-tree VERILOG

ARM dual port SRAM compiler Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	PDF	STD130 STD130 24nW/MHz ARM920T/ARM940T, ARM dual port SRAM compiler rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
tl 0741 Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	PDF	STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
diode b12 Abstract: STD110 Text: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS VDD = 3.3 ± 0.3V, TA = -40 to 85°C, VEXT = 5 ± 0.25V In case of 5V tolerant	Original	PDF	STD110 diode b12 STD110
TDA 9361 PS Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088 Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	PDF	STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
STD1109 Abstract: No abstract text available Text: Cal-Chip Electronics, Incorporated STD SERIES SMD Power Inductor For Noise/EMI/RFI Filters OUTLINE • Cal-Chip SMD power inductors are best designed for noise / EMI / RFI filters for surface mounting application. • These components contain tremendous electrode straight,	Original	PDF	STD1109-820M STD1109 HP4191A STD1109
foxcom 7320R Abstract: Foxcom FOXCOM FIBEROPTIC TRANSMITTER 7320 7320T 7000M 7320R Foxcom 7000m audio transmitter and receiver using optical fiber cable Text: A typical application using System 7320 Vertical 7000M Chassis/ Power Supply 7000S Standby Power Supply 7000S Standby Power Supply 7320T Horizontal Satellite Receiver 7320R Fiberoptic Cable 7320T-L 7320R LNB Powering sadna/graphic design 4/99 p.A.B System 7320 - L-Band Fiberoptic Interfacilty Link	Original	PDF	7000M 7000S 7320T 7320R 7320T-L 7000M foxcom 7320R Foxcom FOXCOM FIBEROPTIC TRANSMITTER 7320 7320T 7320R Foxcom 7000m audio transmitter and receiver using optical fiber cable
STD1109T-390M-B-N Abstract: STD1109T-122M-B-N STD1109T101 STD1109T101MB STD1109T-101M-B-N STD1109T-180M-B-N Text: SMD Unshielded Power Inductors - STD Series STD Series Chilisin SMD power inductors, STD Series, are best-designed noise / EMI / RFI filters for surface mount applications. These components contain tremendous electrode straight, solder heat resistance and outstanding	Original	PDF
Untitled Abstract: No abstract text available Text: Yageo corporation INDUCTORS / BEADS SMD Power Inductors STD Series APPLICATIONS Power Supply, Power Amplifiers Switching Regulators OUTLINE Yageo SMD power inductors, STD Series, are best-designed noise / EMI / RFI filters for surface mount applications. PRODUCT IDENTIFICATION	Original	PDF	HP4263B HP4192A CH1061A CH301A HP4284A HP42841A CH502BC 160mm 330mm STD1109
STD1109T-391M-B-S Abstract: STD1109 Text: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors STD0804 Series Yageo SMD power inductors are best designed for noise / EMI / RFI filters for surface mounting applications. These components contain tremendous electrode straight, solder heat resistance and outstanding	Original	PDF	STD0804 soldering00Hrs. 24Hrs. 1000Hrs. STD1109T-391M-B-S STD1109

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STD110 Price and Stock

STMicroelectronics STD110N8F6

Visual Communications Company STD_110_BLK

onsemi STD110N02RT4G

STMicroelectronics STD110NH02LT4

onsemi STD110N02RT4G-VF01

STD110 Datasheets (17)

STD110 Datasheets Context Search

dl2d

Untitled

inverter PURE SINE WAVE schematic diagram

110n2g

D110NH02L

STD110NH02L

Untitled

STD1109T-102M

Untitled

Untitled

STD110NH02LT4

110n2g

Untitled

PURE SINE WAVE inverter schematic diagram

ARM dual port SRAM compiler

tl 0741

diode b12

TDA 9361 PS

RISC-Processor s3c2410

STD1109

foxcom 7320R

STD1109T-390M-B-N

Untitled

STD1109T-391M-B-S