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    Abstract: No abstract text available
    Text: ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST2319SRG ST2319SRG OT-23 -40V/-3 -40V/-2 OT-23

    st2319

    Abstract: MOSFET P channel SOT-23 P channel MOSFET 10A MOSFET P-Channel sot-23 MARKING TR SOT23-3 P MOSFET
    Text: ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF ST2319SRG ST2319SRG OT-23 -40V/-3 -40V/-2 OT-23 st2319 MOSFET P channel SOT-23 P channel MOSFET 10A MOSFET P-Channel sot-23 MARKING TR SOT23-3 P MOSFET