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    SST6301

    Abstract: No abstract text available
    Text: SST6301K 640mA, 30V,RDS ON 1.0Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST6301K utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.


    Original     		PDF SST6301K 640mA, OT-26 37Ref. SST6301K 20Ref. Ab1-Jun-2002 SST6301