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    SS8050LT1 Search Results

    SS8050LT1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SS8050LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    SS8050LT1 Weitron NPN General Purpose Transistors Original PDF
    SS8050LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF

    SS8050LT1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN SOT-323 FEATURES 1. BASE 2. EMITTER W (Tamb=25℃) 1. 30¡ À0. 03 Collector current 1.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-323 SS8050LT1 OT-323 100mA 800mA 800mA, 30MHz SS8050LT1

    Untitled

    Abstract: No abstract text available
    Text: SS8050LT1 NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23

    Untitled

    Abstract: No abstract text available
    Text: SS8050LT1 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23

    SS850

    Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
    Text: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR


    Original     		PDF SS8550LT1 SS8050LT1 -800mA 625mW OT-23 100mA 800mA -800mA -80mA SS850 amplifier 800mA SS8550LT1 Y2 TRANSISTOR

    SS8050LT

    Abstract: 8050LT1
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT

    SS8050LT1

    Abstract: marking H
    Text: SS8050LT1 SS8050LT1 TRANSISTOR NPN FEATURES SOT-323 1. 25¡ À0. 05 Power dissipation 1. 01 REF 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: 1.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF SS8050LT1 OT-323 100mA 800mA 800mA, 30MHz SS8050LT1 marking H

    IC800

    Abstract: y1 npn SS8050LT1
    Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw ) O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23 IC800 y1 npn

    marking y1 sot-23

    Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
    Text: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR


    Original     		PDF SS8050LT1 SS8550LT1 800mA 625mW OT-23 100mA 800mA 30MHz marking y1 sot-23 SS8550LT1 Y1 SS8050LT1 amplifier 800mA

    sot-23 Marking 1Hc

    Abstract: SOT-23 1HC
    Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 27-Jul-2012 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 27-Jul-2012 80mAdc) OT-23 sot-23 Marking 1Hc SOT-23 1HC

    sot-23 Marking 1Hc

    Abstract: TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC
    Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 O E=20 Vdc, I E= 0 ) 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 0.15 u Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF SS8050LT1 OT-23 10-Apr-09 80mAdc) OT-23 sot-23 Marking 1Hc TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC

    Y1 SOT-23

    Abstract: marking y1 sot-23 8050LT1 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8050LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 1.5 A


    Original     		PDF OT-23 OT--23 SS8050LT1 8050LT1 037TPY 950TPY 550REF 022REF Y1 SOT-23 marking y1 sot-23 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    AZD074

    Abstract: No abstract text available
    Text: IQ Switch ProxSense® Series Application Note: AZD074 How to design a $3.50* educational touch toy IQ Switch®- ProxSense® Series 1 Introduction Capacitive touch keys provide robustness and flexibility to a cost-effective educational toy. Touch keys will withstand the „abuse‟ inflicted


    Original     		PDF AZD074 IQS550, AZD074: AZD074