MA8000
Abstract: MAZS200 MA8000 Series
Text: Ultra Small Package SS Mini 2-pin ZenerDiode Series MAZS Series • Features ■ Package Outlines 1) 2) 3) 4) Ultra Small Package – SS Mini (2-pins) 1608 – Type Package Power dissipation: Ptot=150mW Vz series: 2.4 V to 39 V (Rank classification is available)
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150mW
MAZ8000
MA8000
MAZS024
MAZS027
MAZS030
MAZS033
MAZS036
MAZS039
MAZS043
MAZS200
MA8000 Series
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ETFE
Abstract: MIL-PRF-49291 kevlar fibers 250-FEP ETFE material FEP CONNECTOR
Text: Fiber Optic Connectors MTP & MT-RJ Connectors MTP Connector .039 (.905) (1.795) (.075) A A (.492) Plug P/N: Receptacle P/N: Adapter P/N: 239033-2002 (Shown) 239033-3000 239033-4002 MT-RJ Connector (1.783) MTRJ SS BOOT (1.941) MINI - ZIP BOOT (1.319) MTRJ SS BOOT
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MIL-DTL-38999
SMF-28
MIL-PRF-49291/6
275NA
100KPSI
275NA,
ETFE
MIL-PRF-49291
kevlar fibers
250-FEP
ETFE material
FEP CONNECTOR
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S-Mini
Abstract: SSMini s-mini 2-pin package
Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes
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MA2Q705)
S-Mini
SSMini
s-mini 2-pin package
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Untitled
Abstract: No abstract text available
Text: A orms M L latf E is P ss a Ch Mini ATR, 3-Slot OpenVPX Platform Rugged, Small Form Factor Description The modular design of this Mini ATR platform allows for various configurations. The chassis can easily be scaled up or down while using the same side walls.
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BKP3-CEN03-15
100mm
199mm
200mm
299mm
300mm
399mm
47-500Hz)
MIL-STD-704,
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MINI3PIN
Abstract: MA4ZD14
Text: New Low V F Schottky Barrier Diode Series • Overview This series of low Schottky barrier diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type
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MA2Q705)
MA2ZD14
MA4ZD14
MA3XD14E
MA2SD19
MA2SD24
MA2Z748
MA2ZD18
MA3ZD12
MA2YD15
MINI3PIN
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2SC4691
Abstract: No abstract text available
Text: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment
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2SC4691
2SC4691
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2SC4691
Abstract: No abstract text available
Text: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment
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2SC4691
2SC4691
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marking UD
Abstract: 2SC4627
Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4627
100MHz
marking UD
2SC4627
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SA1790
2SC4626
2SA1790
2SC4626
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SA1790
2SC4626
2SA1790
2SC4626
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MA3S781E
Abstract: MA781WK M2R DIODE
Text: Schottky Barrier Diodes SBD MA3S781E (MA781WK) Silicon epitaxial planar type (cathode common) Unit : mm 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features 1 + 0.05 • SS-mini type 3-pin package • Allowing high-density mounting • Cathode common type 0.28 ± 0.05
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MA3S781E
MA781WK)
MA3S781E
MA781WK
M2R DIODE
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2SC4655
Abstract: No abstract text available
Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment
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2SC4655
2SC4655
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2SC5363
Abstract: No abstract text available
Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment
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2SC5363
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2SC4655
Abstract: No abstract text available
Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment
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2SC4655
45MHz
2SC4655
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package allowing downsizing of the equipment and
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2SB1462
2SD2216
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2SB1615
Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538
Text: 118 • Package No. b^32fiS2 Applica tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type
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A2SB1610
A2SD2472
2SB1537
2SD2357
2SB1538
12SD2358
A2SB1619
A2SD2483
A2SB1611
IA2SD2473
2SB1615
2SC4929
2SC4971
2SD2504
2SA879
2SB873
2sb161
2sc2188
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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2sc5021
Abstract: 2SA1323 2SC4969 2SA 10G 2SA838 2SC4670 2SC4973 2SC5020 2sc2188 VCO 10G
Text: Transistors Selection Guide by Applications and Functions High Speed Switch *VC O and High Frequency Type Package (No.) Application Functions SS Mini Type (D1) High speed switch VCO and high freq. type S Mini Type (D5) Mini Type (D10) 2SA1806 2SA1739 2SA1738
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2SA1806
2SA1739
2SA1738
2SC4691
2SC3938
2SC3757
2SC4969
2SC3811
2SC4755
2SC4782
2sc5021
2SA1323
2SA 10G
2SA838
2SC4670
2SC4973
2SC5020
2sc2188
VCO 10G
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3SK192
Abstract: 2SK651
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )
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2SK2380
2SJ0385
2SJ364
2SK662
2SK663
2SK1103
2SJ163
2SK198
2SK374
2SK123
3SK192
2SK651
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3sk287
Abstract: 3SK139 3sk247 3SK285
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type
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3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk287
3SK139
3sk247
3SK285
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2SD2458
Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Text: • Silicon Small Signal Transistors Package No. S9TST0D Applica tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type
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O-92NL
2SB1462
2SD2216
2SB1218A
I2SD1819A
2SB709A
2SD601A
2SB1627
I2SD2496
2SA1309A
2SD2458
2SD2436
2SD2434
2SB1600
2SB642
2SD2433
2SD1010
2sB774 transistor
HOA1404-2
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2SC5021
Abstract: 2SA1888 D49 transistor TS 12164 2sc4973 2sc2188 2SC4969 panasonic silicon can tuner 2SA1738 2SA1739
Text: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938
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2SA1806
2SA1739
2SA1738
2SC4691
2SC3938
2SC3757
2SC4969
2SC3811
2SC4755
2SC4782
2SC5021
2SA1888
D49 transistor
TS 12164
2sc4973
2sc2188
panasonic silicon can tuner
2SA1738
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3sk272
Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Text: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)
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2SC1215
3SK268
3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk272
2SK1964
3sk247
3SK270
3SK271
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