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    SRM2264L12 Search Results

    SRM2264L12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SRM2264L12 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264L12 Unknown HIGH SPEED CMOS 64K BIT STATIC RAM Scan PDF

    SRM2264L12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    upd444c

    Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
    Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238


    Original     		000-97-MEM-1 SRM2016C10/12 16K-Bit SRM2016C/MT12 SRM2264L10/12 64K-Bit -44pin-R1 81max upd444c SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT PDF

    SRM2264lm10

    Abstract: SRM2264L10 SRM2264L DIP-28 SRM2264L12
    Text: SRM2264L10/12 CMOS 64K-BIT STATIC RAM ● Low Supply Current ● Access Time 100ns/120ns ● 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory


    Original     		SRM2264L10/12 64K-BIT 100ns/120ns SRM2264L10/12 192-word SRM2264L10 100pF 000-97-MEM-1 SRM2264lm10 SRM2264L10 SRM2264L DIP-28 SRM2264L12 PDF

    SRM2264LM

    Abstract: No abstract text available
    Text: S R M 2 2 6 4 L i o 12 HIGH SPEED CMOS 64K-BIT STATIC RAM I DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


    OCR Scan     		64K-BIT SRM2264Lio/i2 SRM2264Lio 100ns SRM2264Lia 120ns SRM2264Lao/io/i2 SRM2264Lio/iz 713Ma» 28-pin SRM2264LM PDF

    SRM2264LM10

    Abstract: No abstract text available
    Text: SRM2264L10/12 CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a m onolithic CM OS chip. Its very low standby power requirem ent makes it ideal for applications requir­


    OCR Scan     		SRM2264L10/12 64K-BIT 100ns/120ns SRM2264L10/12 192-word 2264L-0 2264L-2 P2-28pin* SRM2264LM10/12 SRM2264L10/12. SRM2264LM10 PDF

    SRM2264LCT

    Abstract: 2264L SRM2264
    Text: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with


    OCR Scan     		SRM2264L 64K-BIT 100ns/120ns SRM2264Lio/i2 SRM2264Lio 100ns 120ns 100ns SRM2264LCT 2264L SRM2264 PDF

    SRM2264LC90

    Abstract: srm2264lm90 SRM2264LC10 CS250 SRM2264 SRM2264L SRM2264L10 SRM2264L12 SRM2264LC
    Text: S R M 2 2 6 4 L i o 1 2 HIGH SPEED CMOS 64K-BIT STATIC RAM I DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


    OCR Scan     		SRM2264L, 64K-BIT SRM2264Lio/i2 SRM2264Lio 100ns SRM2264Ã 120ns SRM2264L10/12 SRM2264LC90 srm2264lm90 SRM2264LC10 CS250 SRM2264 SRM2264L SRM2264L10 SRM2264L12 SRM2264LC PDF

    20256LC12

    Abstract: SRM20256LC10 SRM20256LC12 SRM20256lct SRM20256LMT10 20256LC10
    Text: S R M 2 0 2 5 6 LT io/i2 CMOS 256K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM20256LTio/i2 is a 32,768 word x 8 bits asynchronous, static, random access memory fabricated using an advanced CMOS technology. Its very low standby power feature makes it ideal for applications requiring non­


    OCR Scan     		256K-BIT SRM20256LTio/i2 SRM20256LTio SRM20256LT10/12 28-pin 28-pinR1 SRM20256LTMio/i2 SRM2G256LCio/i2. SRM20256LRMio/i2 20256LC12 SRM20256LC10 SRM20256LC12 SRM20256lct SRM20256LMT10 20256LC10 PDF