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    Rochester Electronics LLC SPP04N60S5

    N-CHANNEL POWER MOSFET
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    Infineon Technologies AG SPP04N60S5BKSA1

    MOSFET N-CH 600V 4.5A TO220-3
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    DigiKey SPP04N60S5BKSA1 Tube 500
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    Infineon Technologies AG SPP04N60S5

    Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220 Tube
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    Verical SPP04N60S5 41,600 522
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    Rochester Electronics SPP04N60S5 42,120 1
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    Siemens SPP04N60S5

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    Quest Components SPP04N60S5 941
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    SPP04N60S5 364
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    SPP04N60S5 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP04N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A Original PDF
    SPP04N60S5 Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPP04N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP04N60S5BKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO-220 Original PDF

    SPP04N60S5 Datasheets Context Search

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    SPP04N60S5

    Abstract: 04n60s5
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 PG-TO220-3-1, SPP04N60S5 04n60s5

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60s5

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 04n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201

    5A20V

    Abstract: No abstract text available
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 P-TO220-3-1 PG-TO220-3-1 SPP04N60S5 PG-TO220-3-1 Q67040-S4200 04N60S5 5A20V

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5 04N60S 04n60
    Text: SPP04N60S5 SPB04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5 04N60S 04n60

    04n60s5

    Abstract: SPP04N60S5
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPP04N60S5

    04n60s5

    Abstract: No abstract text available
    Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201 04n60s5

    SPB04N60S5

    Abstract: 04N60S5 SPP04N60S5 04N60
    Text: SPP04N60S5 SPB04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 SPP04N60S5 P-TO220-3-1 P-TO263-3-2 04N60S5 Q67040-S4200 SPB04N60S5 04N60S5 04N60

    04N60S5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO220-3-1 04N60S5 Q67040-S4200 P-TO263-3-2 SPP04N60S5 04N60S5 SPB04N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 P-TO220-3-1 PG-TO220-3-1 SPP04N60S5 PG-TO220-3-1 Q67040-S4200 04N60S5

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    TDA 4862 G-T

    Abstract: TDA4863G tda4863 tda4863-2 TDA48632 dc dc converter 5v to 400v
    Text: Power Factor Controller IC for High Power Factor and Low THD TDA4863-2 Final Data 1 Overview 1.1 Features Boost Controller • IC for sinusoidal line-current consumption • Power factor achieves nearly 1 • Controls boost converter as active harmonic filter for low THD


    Original     		PDF TDA4863-2 TDA4863 GPD05583 GPS09032 TDA 4862 G-T TDA4863G tda4863 tda4863-2 TDA48632 dc dc converter 5v to 400v

    4863g

    Abstract: 4863g IC TDA4863G zero crossing detector mosfet tda4863-2 TDA4863 TDA48632
    Text: preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD =IC for sinusoidal line-current consumption =Power factor achieves nearly 1 =Controls boost converter as active harmonic filter for low THD  Start up with low current consumption


    Original     		PDF TDA4863 0-270V 750uH E36/11 MR856 SPP04N60S5 TDA4863 4863g 4863g IC TDA4863G zero crossing detector mosfet tda4863-2 TDA48632

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    TDA4863 application note

    Abstract: tda4863 equivalent TDA4863G IEC555 MR856 Q67040-A4451 Q67040-S4452 TDA4863 R4B MARKING CODE
    Text: Data Sheet, V1.0, May 2003 Boost C on t r o l l e r TDA4863 Power Factor Controller IC for High Power Factor and Low THD Power Management & Supply N e v e r s t o p t h i n k i n g . TDA4863 Revision History: 2003-05 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF TDA4863 2002-Sep. TDA4863 application note tda4863 equivalent TDA4863G IEC555 MR856 Q67040-A4451 Q67040-S4452 TDA4863 R4B MARKING CODE

    4863g

    Abstract: TDA4863 4863g IC TDA 4863 220v ac to 9v dc converter 4863G datasheet zero crossing detector mosfet 220V ac to 12V dc 8 amps power supply circuit Q67040-S4451 zero crossing detector ic with 90v
    Text: preliminary Power Factor Controller TDA4863 Boost Controller IC for High Power Factor and low THD • IC for sinusoidal line-current consumption · Power factor achieves nearly 1 · Controls boost converter as active harmonic filter for low THD · Start up with low current consumption


    Original     		PDF TDA4863 140mA, 4863g TDA4863 4863g IC TDA 4863 220v ac to 9v dc converter 4863G datasheet zero crossing detector mosfet 220V ac to 12V dc 8 amps power supply circuit Q67040-S4451 zero crossing detector ic with 90v

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    Untitled

    Abstract: No abstract text available
    Text: SPB04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB04N60S5 PG-TO263 04N60S5 SPB04N60S5 Q67040-S4201

    04n60s5

    Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
    Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s


    OCR Scan     		PDF SPPx6N60S5/SPBx6N60S5 SPP04N60S5 SPB04N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 04N60S5 Q67040-S4200 transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF

    FAG 32 diode

    Abstract: No abstract text available
    Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-T0220-3-1 04N60S5 Q67040-S4200 P-T0263-3-2 FAG 32 diode