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    04N60S5 Search Results

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    04N60S5 Price and Stock

    Infineon Technologies AG SPN04N60S5

    MOSFET N-CH 600V 800MA SOT223-4
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    DigiKey SPN04N60S5 Reel 1,000
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    • 10000 $0.49725
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    ComSIT USA SPN04N60S5 575
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    Rochester Electronics LLC SPP04N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPP04N60S5 Bulk 452
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    Infineon Technologies AG SPD04N60S5

    MOSFET N-CH 600V 4.5A TO252-3
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    DigiKey SPD04N60S5 Reel 2,500
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    EBV Elektronik SPD04N60S5 26 Weeks 2,500
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    Infineon Technologies AG SPD04N60S5BTMA1

    MOSFET N-CH 600V 4.5A TO252-3
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    DigiKey SPD04N60S5BTMA1 Reel
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    Rochester Electronics SPD04N60S5BTMA1 4,900 1
    • 1 $0.6528
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    EBV Elektronik SPD04N60S5BTMA1 26 Weeks 2,500
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    Infineon Technologies AG SPB04N60S5ATMA1

    MOSFET N-CH 600V 4.5A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB04N60S5ATMA1 Digi-Reel 1
    • 1 $2.19
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    SPB04N60S5ATMA1 Cut Tape 1
    • 1 $2.19
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    SPB04N60S5ATMA1 Reel 1,000
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    • 1000 $0.69629
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    Find more 04N60S5 price and stock on Findchips.com

    04N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    04N60S5

    Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
    Text: 04N60S5 04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-TO251-3-1 P-TO252 04N60S5 Q67040-S4228 04N60S5 SPD04N60S5 P-TO251-3-1 P-TO252 04N60

    SPN04N60S5

    Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163
    Text: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 transistor smd marking ds sot-223 04n60s5 VPS05163

    720 TRANSISTOR smd sot-223

    Abstract: SPN04N60S5
    Text: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 SPN04N60S5 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223

    Untitled

    Abstract: No abstract text available
    Text: 04N60S5 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4228 Q67040-S4202

    04n60s5

    Abstract: No abstract text available
    Text: 04N60S5 04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances


    Original     		PDF SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4228 Q67040-S4202 04n60s5

    SPP04N60S5

    Abstract: 04n60s5
    Text: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 PG-TO220 P-TO220-3-1 Q67040-S4200 04N60S5 PG-TO220-3-1, SPP04N60S5 04n60s5

    04N60S5

    Abstract: SPN04N60S5 04N60S 04N60 GPS05560 VPS05163 Q67040-S4211
    Text: 04N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 • Ultra low gate charge 3 G,1 • Extreme dv/dt rated 1 • Optimized capacitances V DS ID 04N60S5 600 V 0.8 A


    Original     		PDF SPN04N60S5 SPN04N60S5 VPS05163 OT-223 04N60S5 Q67040-S4211 04N60S5 04N60S 04N60 GPS05560 VPS05163 Q67040-S4211

    SPN04N60S5

    Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223
    Text: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: 04N60S5 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60s5

    Abstract: 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor
    Text: 04N60S5 04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 SPUx6N60S5/SPDx6N60S5 Q67040-S4228 04N60S5 04n60s5 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor

    uA7720

    Abstract: SPN04N60S5
    Text: 04N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Extreme dv/dt rated RDS(on) 0.95 Ω • Optimized capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 Q67040-S4211 04N60S5 uA7720 SPN04N60S5

    04n60s5

    Abstract: SPD04N60S5
    Text: 04N60S5 04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 P-TO251-3-1 P-TO252 04N60S5 04N60S5 Q67040-S4228 SPD04N60S5

    04n60s5

    Abstract: No abstract text available
    Text: 04N60S5 04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 SPPx6N60S5/SPBx6N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 04n60s5

    Untitled

    Abstract: No abstract text available
    Text: 04N60S5 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4200 Q67040-S4201

    5A20V

    Abstract: No abstract text available
    Text: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 P-TO220-3-1 PG-TO220-3-1 SPP04N60S5 PG-TO220-3-1 Q67040-S4200 04N60S5 5A20V

    Untitled

    Abstract: No abstract text available
    Text: 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB04N60S5 PG-TO263 04N60S5 SPB04N60S5 Q67040-S4201

    04N60S5

    Abstract: SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163
    Text: 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 04N60S5 SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: 04N60S5 04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    04n60s5

    Abstract: SPN04N60S5 GPS05560 VPS05163
    Text: 04N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Worldwide best RDS on in SOT 223 Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Extreme dv/dt rated RDS(on)


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 04n60s5 SPN04N60S5 GPS05560 VPS05163

    04n60s5

    Abstract: 04N60 TRANSISTOR SMD MARKING CODE WS Q67040-S4202 SPU04N60S5 SPD04N60S5
    Text: 04N60S5 04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU04N60S5 SPD04N60S5 PG-TO252 PG-TO251 Q67040-S4228 04N60S5 04n60s5 04N60 TRANSISTOR SMD MARKING CODE WS Q67040-S4202 SPU04N60S5 SPD04N60S5

    04N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5
    Text: 04N60S5 04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 Q67040-S4228 04N60S5 04N60S5 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5

    04n60s5

    Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
    Text: SIEMENS 04N60S5 04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s


    OCR Scan     		PDF SPPx6N60S5/SPBx6N60S5 SPP04N60S5 SPB04N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 04N60S5 Q67040-S4200 transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 04N60S5 04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-T0251 04N60S5 Q67040-S4228 P-T0252