Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A
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RX1214B300Y
OT439
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT439A D A F 3 D1 U1 B q C c 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT439A
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MX0912B351Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A
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MX0912B351Y
OT439A
SCA53
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MX0912B251Y
Abstract: capacitor 470 uF
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A
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MX0912B251Y
OT439A
SCA53
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MX0912B251Y
capacitor 470 uF
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RX1214B300Y
Abstract: RX1214B300 L-Band
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A
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RX1214B300Y
OT439A
SCA53
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RX1214B300Y
RX1214B300
L-Band
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency
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MX0912B251Y
OT439A
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transistor 359 AJ
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency
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MX0912B351Y
OT439A
SCA53
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transistor 359 AJ
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT439A D A F 3 D1 U1 B q C c 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c
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OT439A
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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339 marking code transistor
Abstract: BP317 MX1011B430W SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B430W NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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MX1011B430W
SCA53
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339 marking code transistor
BP317
MX1011B430W
SC15
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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BP317
Abstract: LXE18300X SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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LXE18300X
SCA53
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BP317
LXE18300X
SC15
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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RX1214B300Y
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
MBH904
MBH903
RX1214B300Y
RX1214B300Y
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gk06
Abstract: microwave transistor S- parameter GK066
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
100A101KP50X
MX0912B251Y
GK066
gk06
microwave transistor S- parameter
GK066
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JH transistor
Abstract: MX0912B251Y SC15 Philips electrolytic screw
Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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MX0912B251Y
OT439A
MBC881
OT439A.
JH transistor
MX0912B251Y
SC15
Philips electrolytic screw
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GL-056
Abstract: sot439
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B351Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
100A101KP50X
MX0912B351Y
GL-056
sot439
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microwave transistor 03
Abstract: MX0912B351Y SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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MX0912B351Y
OT439A
MBC881
OT439A.
microwave transistor 03
MX0912B351Y
SC15
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Untitled
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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OT122A
OT422A
OT423A
OT437A
OT439A
OT440A
OT441A
OT442A
OT443A
OT445A
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T01A transistor
Abstract: T01A RX1214B300Y SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y PINNING - SOT439A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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RX1214B300Y
OT439A
OT439A.
T01A transistor
T01A
RX1214B300Y
SC15
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SL 100 NPN Transistor
Abstract: PXB16050U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PXB16050U FEATURES QUICK REFERENCE DATA • Input and output matching cells allow an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors
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PXB16050U
MCD622
OT439A.
SL 100 NPN Transistor
PXB16050U
SC15
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor
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RX1214B170W
7/00/02/pp12
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, 10% duty factor MX1011B200Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C
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100A101kp50x
LC467
X1011B200Y
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