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    y112

    Abstract: BGY112A BGY112B BGY112C DD302
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l GQ3QSÖD T4M M A P X Philips Components Data sheet status Preliminary specification date of issue May 1991 B G Y 1 1 2 A/1 1 2 B/1 1 2 C VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier


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    PDF /112B/112C BGY112A BGY112B BGY112C bbS3R31 DD302Ã BGY112A/112B/112C OT288C. y112 BGY112C DD302

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE D Philips Components • bbSaiai OQBQEfiD =144 BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in


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    PDF BGY112A/112B/112C OT288C MS6042s bbS3R31 OT288C.

    Amplifier Modules

    Abstract: sot288c philips vhf amplifier module philips rf power amplifier module
    Text: Philips Components BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in portable communications equipment with nominal 7.5 V electrical battery


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    PDF BGY112A/112B/112C OT288C OT288C. Amplifier Modules sot288c philips vhf amplifier module philips rf power amplifier module

    RF Power Modules

    Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
    Text: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32


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    PDF BGY32 BGY33 BGY35 BGY36 BGY43 BGY46A BGY46B BGY47A BGY95A BGY95B RF Power Modules BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132

    SOT262

    Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
    Text: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348


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    PDF BLF346 BLF348 OT-119, OT-262, BLF276 BLF278 BLF248 BLF368 BLF378 OT-119D3, SOT262 power amplifier blf278 BGY47 321 SOT BGY145 sot183 BGY43 SOT246

    BGY112B

    Abstract: SOT288C PHILIPS 4330 030 36300 vHF amplifier module BGY112A BGY112C FERROXCUBE 4330 4330 ferroxcube
    Text: Philips Semiconductors Objective specification VHF amplifier modules BGY112A; BGY112B; BGY112C FEATURES DESCRIPTION • 7.5 V nominal supply voltage The BGY112A, BGY112B and BGY112C are three-stage VHF power amplifier modules. • 6 W output power Each module consists of three NPN silicon planar


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    PDF BGY112A; BGY112B; BGY112C BGY112A, BGY112B BGY112C OT288C MSB042 7110A2b SOT288C PHILIPS 4330 030 36300 vHF amplifier module BGY112A FERROXCUBE 4330 4330 ferroxcube

    Philips Semiconductors RF Power Modules

    Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
    Text: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5


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    PDF OT132B OT288C OT183A Philips Semiconductors RF Power Modules RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"