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    SMJ28F010B Search Results

    SMJ28F010B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SMJ28F010B Austin Semiconductor 1,024 ( 128K x 8 ) FLASH Original PDF
    SMJ28F010B-12JDDM Texas Instruments 131072 BY 8-BIT FLASH MEMORY Original PDF
    SMJ28F010B-15JDDM Texas Instruments 131072 BY 8-BIT FLASH MEMORY Original PDF
    SMJ28F010B-20JDDM Texas Instruments 131072 BY 8-BIT FLASH MEMORY Original PDF

    SMJ28F010B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMJ28F010B

    Abstract: Flash 208V
    Text: SMJ28F010B 131072 BY 8-BIT FLASH MEMORY SGMS738 – APRIL 1998 D D D D D D D D D D D Organization . . . 131 072 x 8-Bit Flash Memory Pin Compatible With Existing 1M-bit EPROMs High-Reliability MIL-PRF-38535 Processing VCC Tolerance ±10% All Inputs / Outputs TTL Compatible


    Original     		SMJ28F010B SGMS738 MIL-PRF-38535 28F010B-12 28F010B-15 28F010B-20 SMJ28F010B Flash 208V PDF

    27c eeprom

    Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
    Text: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as


    Original     		16MEG 64Kx4) 256Kx1) 256Kx4) 512Kx32 1Mx16, 2Mx32 4Mx16, 1Mx32 2Mx16, 27c eeprom AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F PDF

    5962-9089904MYA

    Abstract: 5962-9089904MXA smd marking b4h 5962-9089902MYA 5962-9089903MXA MD28F010-20 qml-38535 5962-9089909MXA 5962-9089902MXA 59629089904mya
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Updated boilerplate. Added device types 09 - 13. Moved endurance and data retention testing requirements from Section 4 of drawing to Section 3 of drawing. Editorial changes throughout. 94-03-25 M. A. Frye


    Original     		0EU86 5962-9089904MYA 5962-9089904MXA smd marking b4h 5962-9089902MYA 5962-9089903MXA MD28F010-20 qml-38535 5962-9089909MXA 5962-9089902MXA 59629089904mya PDF

    smd marking b4h

    Abstract: MD28F010-20 GDIP1-T32 MD28F010-15/B smd transistor marking a2h qml-38535 jfet n channel ultra low noise MD28F010-20/B MR28F010-25 SMJ28F010B-20HKM
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A Updated boilerplate. Added device types 09 - 13. Moved endurance and data retention testing requirements from Section 4 of drawing to Section 3 of drawing. Editorial changes throughout. 94-03-25 M. A. Frye B Updated boilerplate. Added vendor CAGE 01295 as a source of


    Original     		0EU86 0EU86 smd marking b4h MD28F010-20 GDIP1-T32 MD28F010-15/B smd transistor marking a2h qml-38535 jfet n channel ultra low noise MD28F010-20/B MR28F010-25 SMJ28F010B-20HKM PDF

    smd marking b4h

    Abstract: MD28F010-20 QML-38535 MD28F010-15/B MD28F010-15 MD28F010-12 SMJ28F010B-15HKM MIL-PRF38535 MR28F010-20 MR28F010-90
    Text: 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Endurance: Device types 01-04, 09 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		MIL-PRF-38535 MIL-PRF-38535, 0EU86 smd marking b4h MD28F010-20 QML-38535 MD28F010-15/B MD28F010-15 MD28F010-12 SMJ28F010B-15HKM MIL-PRF38535 MR28F010-20 MR28F010-90 PDF

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


    Original     		QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 PDF

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA PDF

    1372C

    Abstract: No abstract text available
    Text: SMJ28F010B 131072 BY 8-BIT FLASH MEMORY SGMS738 - APRIL 1998 • • • • • • • • • • • Organization . . . 131072 x 8-Bit Flash Memory Pin Compatible With Existing 1M-bit EPROMs High-Reliability MIL-PRF-38535 Processing VCC Tolerance ±10%


    OCR Scan     		SMJ28F010B SGMS738 MIL-PRF-38535 28F010B-12 28F010B-15 28F010B-20 1372C PDF

    SMJ28F010B-15HKM

    Abstract: MD28F010-12 marking code mxx SMD ic MD28F010-20 qml-38535 28F010 GDIP1-T32 SMD A7H smd marking b4h SMJ28F010B-20FEM
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Updated boilerplate. Added device types 0 9 - 1 3 . Moved endurance and data retention testing requirements from Section 4 of drawing to Section 3 of drawing. Editorial changes throughout._


    OCR Scan     		0EU86 SMJ28F010B-15HKM MD28F010-12 marking code mxx SMD ic MD28F010-20 qml-38535 28F010 GDIP1-T32 SMD A7H smd marking b4h SMJ28F010B-20FEM PDF