SMD TRANSISTOR EQUIVALENT TABLE Search Results

SMD TRANSISTOR EQUIVALENT TABLE Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

SMD TRANSISTOR EQUIVALENT TABLE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
smd transistor marking A9 Abstract: smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a9 transistor marking A9 smd transistor marking nv Text: BCM857BS PNP matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description PNP matched double transistor in SOT363 SC-88 SMD plastic package. Matched version of BC857BS. The transistors are fully isolated internally. NPN equivalent:	Original	PDF	BCM857BS OT363 SC-88) BC857BS. BCM847BS. smd transistor marking A9 smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a9 transistor marking A9 smd transistor marking nv
SMD TRANSISTOR MARKING 28 Abstract: BCM61B BCM62B BCV61 MARKING CODE SMD IC MSA422 Text: BCM61B NPN/NPN matched double transistor Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device SMD plastic package. Matched version of BCV61. PNP/PNP equivalent: BCM62B	Original	PDF	BCM61B OT143B BCV61. BCM62B SMD TRANSISTOR MARKING 28 BCM61B BCM62B BCV61 MARKING CODE SMD IC MSA422
TRANSISTOR SMD MARKING CODE ad Abstract: BCM62B MARKING SMD PNP TRANSISTOR BV BCM61B BCV62 MARKING CODE SMD IC Text: BCM62B PNP/PNP matched double transistor Rev. 02 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device SMD plastic package. Matched version of BCV62. NPN/NPN equivalent: BCM61B	Original	PDF	BCM62B OT143B BCV62. BCM61B TRANSISTOR SMD MARKING CODE ad BCM62B MARKING SMD PNP TRANSISTOR BV BCM61B BCV62 MARKING CODE SMD IC
MARKING CODE M1 sot363 Abstract: IC SMD MARKING CODE M1 Text: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally. PNP equivalent:	Original	PDF	BCM847BS OT363 SC-88) BC847BS. BCM857BS. MARKING CODE M1 sot363 IC SMD MARKING CODE M1
TRANSISTOR j412 Abstract: J412 - TRANSISTOR SMD BLF6G38S-25 Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
smd transistor 3400 Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	PDF	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor
30RF35 Abstract: VJ1206Y104KXB smd transistor equivalent table Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.	Original	PDF	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
BLF6G38S-25 Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
C5750X7R1H106M Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table
smd transistor 6g Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
amplifier TRANSISTOR 12 GHZ Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
BLS7G2933S-150 Abstract: a 3150 data sheet JESD625-A Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS7G2933S-150 BLS7G2933S-150 a 3150 data sheet JESD625-A

Untitled Abstract: No abstract text available Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS7G2933S-150
C4532X7R1E475M Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf
BLS6G2731-120 Abstract: No abstract text available Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.	Original	PDF	BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2933S-130 BLS6G2933S-130
Untitled Abstract: No abstract text available Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2933S-130 BLS6G2933S-130
Untitled Abstract: No abstract text available Text: BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF10M6160; BLF10M6LS160 BLF10M6160
transistor 9575 Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
BLF6G10LS-160RN Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13
Untitled Abstract: No abstract text available Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
Untitled Abstract: No abstract text available Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10LS-160 BLF6G10LS-160

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SMD TRANSISTOR EQUIVALENT TABLE Search Results

SMD TRANSISTOR EQUIVALENT TABLE Result Highlights (5)

SMD TRANSISTOR EQUIVALENT TABLE Datasheets Context Search

smd transistor marking A9

SMD TRANSISTOR MARKING 28

TRANSISTOR SMD MARKING CODE ad

MARKING CODE M1 sot363

TRANSISTOR j412

smd transistor 3400

transistor K 1352

30RF35

BLF6G38S-25

C5750X7R1H106M

smd transistor 6g

transistor d 1302

amplifier TRANSISTOR 12 GHZ

BLS7G2933S-150

Untitled

C4532X7R1E475M

BLS6G2731-120

Untitled

Untitled

Untitled

transistor 9575

BLF6G10LS-160RN

Untitled

Untitled