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    SKM300GB12E Price and Stock

    SEMIKRON SKM300GB12E4

    Igbt Module, Dual, 1.2Kv, 422A; Continuous Collector Current:422A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM300GB12E4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM300GB12E4 Bulk 12
    • 1 -
    • 10 $217.78
    • 100 $205.25
    • 1000 $205.25
    • 10000 $205.25
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    SEMIKRON SKM300GB12E4 22892077

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM300GB12E4 22892077 1
    • 1 $287.02
    • 10 $253.37
    • 100 $228.14
    • 1000 $228.14
    • 10000 $228.14
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    SKM300GB12E Datasheets Context Search

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    SKM300GB12E4

    Abstract: skm300gb12e skm300gb SKM300GB-12E4
    Text: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A


    Original     		PDF SKM300GB12E4 SKM300GB12E4 skm300gb12e skm300gb SKM300GB-12E4

    Untitled

    Abstract: No abstract text available
    Text: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A


    Original     		PDF SKM300GB12E4 CAL009

    Untitled

    Abstract: No abstract text available
    Text: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM300GB12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM300GB12E4

    Untitled

    Abstract: No abstract text available
    Text: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A


    Original     		PDF SKM300GB12E4 switc009

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c