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    SISS40DN Price and Stock

    Vishay Siliconix SISS40DN-T1-GE3

    MOSFET N-CH 100V 36.5A PPAK
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    DigiKey SISS40DN-T1-GE3 Cut Tape 1
    • 1 $1.79
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    SISS40DN-T1-GE3 Reel 3,000
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    SISS40DN-T1-GE3 Digi-Reel 1
    • 1 $1.79
    • 10 $1.79
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    New Advantage Corporation SISS40DN-T1-GE3 6,000 1
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    Vishay Intertechnologies SISS40DN-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SISS40DN-T1-GE3)
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    Avnet Americas SISS40DN-T1-GE3 Reel 27 Weeks 3,000
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    SISS40DN-T1-GE3 Reel 27 Weeks 3,000
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    Mouser Electronics SISS40DN-T1-GE3 5,477
    • 1 $0.53
    • 10 $0.498
    • 100 $0.478
    • 1000 $0.469
    • 10000 $0.45
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    Verical SISS40DN-T1-GE3 3,000 3,000
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    SISS40DN-T1-GE3 3,000 3,000
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    SISS40DN-T1-GE3 1,870 13
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    Arrow Electronics SISS40DN-T1-GE3 3,000 27 Weeks 3,000
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    SISS40DN-T1-GE3 Cut Strips 1,870 27 Weeks 1
    • 1 $0.481
    • 10 $0.4778
    • 100 $0.4713
    • 1000 $0.4616
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    Newark SISS40DN-T1-GE3 Cut Tape 1,980 1
    • 1 $0.849
    • 10 $0.757
    • 100 $0.656
    • 1000 $0.656
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    SISS40DN-T1-GE3 Reel 3,000
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    TME SISS40DN-T1-GE3 1
    • 1 $0.883
    • 10 $0.794
    • 100 $0.631
    • 1000 $0.589
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    EBV Elektronik SISS40DN-T1-GE3 27 Weeks 3,000
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    Vishay Intertechnologies SISS40DNT1GE3

    Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SISS40DNT1GE3 87
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    SISS40DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SISS40DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 36.5A PPAK 1212 Original PDF

    SISS40DN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiSS40DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiSS40DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiSS40DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.0210 at VGS = 10 V 36.5 100 0.0230 at VGS = 7.5 V 35 0.0260 at VGS = 6 V 32 • ThunderFET Technology Optimizes Balance of RDS(on), Qg, Qsw and Qoss


    Original     		PDF SiSS40DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiSS40DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.0210 at VGS = 10 V 36.5 100 0.0230 at VGS = 7.5 V 35 0.0260 at VGS = 6 V 32 • ThunderFET Technology Optimizes Balance of RDS(on), Qg, Qsw and Qoss


    Original     		PDF SiSS40DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs