Untitled
Abstract: No abstract text available
Text: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
SiHFZ34S
SiHFZ34L
AN609,
4962m
9514m
4372m
1122m
6484m
|
Untitled
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
O-262)
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
2002/95/EC
O-262)
O-263)
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
2002/95/EC
11-Mar-11
|
IRFZ34SPBF
Abstract: irfz IRFZ34L IRFZ34S SiHFZ34S SiHFZ34S-E3
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
18-Jul-08
IRFZ34SPBF
irfz
IRFZ34L
IRFZ34S
SiHFZ34S-E3
|
IRFZ34L
Abstract: IRFZ34S SiHFZ34S
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
2002/95/EC
11-Mar-11
IRFZ34L
IRFZ34S
|
IRFZ34SPBF
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G COMPLIANT Third generation Power MOSFETs from Vishay utilize
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
IRFZ34L/SiHFZ34L)
O-262)
O-263)
12-Mar-07
IRFZ34SPBF
|
Untitled
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
2002/95/EC
O-262)
O-263)
2011/65/EU
|
Untitled
Abstract: No abstract text available
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
2002/95/EC
O-262)
O-263)
18-Jul-08
|
SiHFZ34S
Abstract: SiHFZ34S-E3 IRFZ34L IRFZ34S IRFZ34SPBF
Text: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.050 Qg (Max.) (nC) 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize
|
Original
|
PDF
|
IRFZ34S,
IRFZ34L,
SiHFZ34S
SiHFZ34L
18-Jul-08
SiHFZ34S-E3
IRFZ34L
IRFZ34S
IRFZ34SPBF
|
