9571
Abstract: AN609 IRF830S SiHF830S
Text: IRF830S_RC, SiHF830S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF830S
SiHF830S
AN609,
18-Mar-10
9571
AN609
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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IRF830S,
SiHF830S
2002/95/EC
O-263)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface Mount VDS V 500 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Available • Available in Tape and Reel VGS = 10 V RoHS* • Dynamic dV/dt Rating
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IRF830S,
SiHF830S
SMD-220
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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IRF830S,
SiHF830S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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IRF830S,
SiHF830S
2002/95/EC
O-263)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface Mount VDS V 500 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Available • Available in Tape and Reel VGS = 10 V RoHS* • Dynamic dV/dt Rating
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IRF830S,
SiHF830S
SMD-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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IRF830S,
SiHF830S
2002/95/EC
O-263)
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D D2PAK (TO-263)
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IRF830S,
SiHF830S
IRF830L,
SiHF830L
O-263)
O-262)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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IRF830S,
SiHF830S
O-263)
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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irf830s application notes
Abstract: IRF830S SiHF830S SiHF830S-E3
Text: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D2PAK (TO-263) G S Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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IRF830S,
SiHF830S
O-263)
18-Jul-08
irf830s application notes
IRF830S
SiHF830S-E3
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Untitled
Abstract: No abstract text available
Text: IRF830S, SiHF830S FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
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IRF830S,
SiHF830S
2002/95/EC
O-263)
S-82110-Rev.
15-Sep-08
5M-1994.
O-263AB.
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