420ECSP
Abstract: BFP420ecsp marking BFP
Text: SIEGET 25 BFP 420ECSP NPN Silicon RF Transistor Preliminary data For oscillators up to 10 GHz XY For high gain low noise amplifiers 4 Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1 Transition frequency f T = 25 GHz Gold metallization for high reliability
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420ECSP
Aug-23-2000
420ECSP
BFP420ecsp
marking BFP
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BFP405
Abstract: BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405
Text: Application Note No. 020 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET 25 BFP405. The design emphasis has been on achieving a low noise
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BFP405
BFP405.
100pF
BFP405
BCR400
rf amplifier siemens 10 ghz
aplication note
SIEMENS BFP405
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siemens rs 1003
Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability
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VPS05605
Q62702-F1592
OT-343
-j100
Sep-09-1998
siemens rs 1003
TRANSISTOR BI 187
Q62702-F1592
VPS05605
TS1440
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marking AUs
Abstract: BFP420F BFP540FESD amplifier marking code a
Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET 45 - Line • Pb-free (ROHS compliant) package 1)
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BFP540FESD
marking AUs
BFP420F
BFP540FESD
amplifier marking code a
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BFP405
Abstract: A03 RF amplifier A03 amplifier BCR400
Text: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise
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BFP405
BFP405.
100pF
BFP405
A03 RF amplifier
A03 amplifier
BCR400
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Siemens DIODE E 1240
Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability
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BFP420
25-Line
Transistor25
Q62702-F1591
OT343
Siemens DIODE E 1240
AMS 3630
Code "A06" RF Semiconductor
SIEMENS BFP420
Transistor MJE 540
HA 12432
SOT343-3
BFP420 application notes
BFP420 A06
ff 0401 transistor
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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SIEMENS BFP405
Abstract: marking A06 transistor A06
Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability
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BFP405
25-Line
Transistor25
62702-F-1592
OT343
SIEMENS BFP405
marking A06
transistor A06
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tca 335 A
Abstract: tca 765 TCA335A
Text: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range
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fl23SbOS
Q67000-A2272
Q67000-A227Ã
fl235b05
0034b5M
TCA335
tca 335 A
tca 765
TCA335A
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Untitled
Abstract: No abstract text available
Text: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families
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023SbD5
81C52
VPS05094
P-DSO-20-1
Q67100-H9017
P-DIP-16
IES008H
81C52
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"if amplifier" siemens
Abstract: No abstract text available
Text: 47E D • flE3SbOS 0034101 3 ■ SIEMENS SIEG SIEMENS AK TI E N G E S l LLSCHAF T^lA'OerOi AM Amplifier for French Sound IF Standard TDA 2148 Bipolar IC Controlled AM IF amplifier with quasi-synchronous demodulator and integral mean value control for French sound IF applications.
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Q67000-A2476
P-DIP-14
fi53SbOS
TDA2148
53SbOS
"if amplifier" siemens
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82C54-2-P
Abstract: No abstract text available
Text: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes
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235b05
0G321ff
82C54
82C54
82C54-2
16-bit
82C54-2)
24-pin
P-DIP-24)
82C54-2-P
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Untitled
Abstract: No abstract text available
Text: ô2 3 5 bD 5 00 34 L7 5 ö • SIEG H7E » SIE M EN S A K T I E N G E S E L L S C H A F “T ^ c\ - 0 > '3 - O TBC 2332 TBE 2335 Dual Operational Amplifier with Darlington Input Bipolar 1C Features • • • • • • • • • High input impedance Wide common-mode range
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Q67000-A2500
Q67000-A1165
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212
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fi23SbOS
0031bl0
82C212
M/256
640CHAF
SAB82C212
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N1475
Abstract: No abstract text available
Text: f l 235 bOS G G 37 b 47 7 • MKT Capacitors SI EMENS A KT I EN 6 E S E L L S C H A F M7E D - - SIEG E3 B 3 2 5 2 0 .B 3 2 52 9 / f 'C f S l 7 ' O S. M e t a liz a d p o ly e s t e r film c a p a c it o r s in a c c o r d a n c e w it h D IN 4 4 1 1 2
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1431A
Abstract: 5060AB
Text: SIEMENS AKTIEN GESELLS CHA F 4?E " fl235bOS 0027^12 5 • SIEG M 9960 Application: • exposure meters in cameras • automatic light intensity control Features: • epoxy-coated low profile cell • small dimensions TYP M 9960 11 a 9960 11 b R10 R100 [kQJ
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fl235bOS
1431A
5060AB
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5B05
Abstract: No abstract text available
Text: SIEMENS AK TIENGE SEL LSCHAF M7E D fl53SbGS 0D573A2 2 • SIEG SIEM ENS SFH 435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE * Diametrical Radiation * High Pulse Handling Capability * Good Spectral Matching with Silicon Photodetectors DESCRIPTION The SFH 435 is a two-beam GaAs infrared
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fl53SbGS
0D573A2
B23SbOS
5B05
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transistor Siemens 14 S S 92
Abstract: transistor 115 47e
Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code
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023SbOS
T-21-Z5
Q67000-S078
Q67000-S060
chap60
235b05
transistor Siemens 14 S S 92
transistor 115 47e
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F47E
Abstract: No abstract text available
Text: S I E M EN S A K T I E N G E S E L L S C H A F r 47E D • Ö S B S bD S 00276^ t> ■ SIEG T-Hl-t'7 LHi 1258 LHi 1258 Pyroelectric-Four-Element-Detector The four-element detector is the sensor ele ment designed for all intelligent systems of motion detection devices. It allows the identifi
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transistor Bf 979
Abstract: pnp vhf transistor
Text: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .
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flB35taDS
0GG45
transistor Bf 979
pnp vhf transistor
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446S
Abstract: 4463a 4463 B OB35
Text: 47E :i: D • v - öB35bDS 0034704 ü ■ SIEG SIEMENS AKTIENGESELLSCHAF T - ”W - O o - 'S - O Quad Low-Drift PNP Operational Amplifier Advance Information TAF 4463 Bipolar 1C Features • • • • • • • • • Low offset voltage drift High offset long-term stability
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B35bDS
7000-A
446S
4463a
4463 B
OB35
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sab82288
Abstract: SAB82289 SAB 80286 16 N 82288
Text: SIEM ENS 47E D • A23SbDS 0 0 3 i n b 3 ■ SIEG SIEMENS AKTI ENGESELLSCHAF " P c Q '3 5 r ö 5 Bus Controller for SAB 80286 Processors SAB 82288 Preliminary SAB 82288-6 up to 12 MHz SAB 82288 up to 16 MHz • Provides com m ands and control fo r local and system bus
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A23SbDS
P-DIP-20
20-pin
SAB82288
T-52-33-55
sab82288
SAB82289
SAB 80286 16 N
82288
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THYRISTOR br 403
Abstract: SIEMENS THYRISTOR thyristor 808 BR403
Text: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications
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fl23SbOS
0G047bl
BR403
62702-R
THYRISTOR br 403
SIEMENS THYRISTOR
thyristor 808
BR403
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF *47E D S IE M E N S • 6S3SbDS DG27135 1 ■ SIEG ^ ^ LR 5420 LS 5420 LY 5420 LG 5410 red SUPER-RED YELLOW GREEN T13/4 5 mm LED LAMP FEATURES * High Light Output * Water Clear Lens: Green Lightly Tinted Clear Lens: Red, SuperRed, Yellow
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DG27135
Q62901-B65
062901-B64
5420-EH
5420-GLR
5420-GK
5420-H
5420-LP
5420-N
5420-NR
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