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Vishay Siliconix SIB404DK-T1-GE3 MOSFET N-CH 12V 9A PPAK SC75-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIB404DK-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIB404DK-T1-GE3 POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 12V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: SIB404DK)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SIB404DK-T1-GE3		1,143			1 $0.5365 10 $0.5365 100 $0.5365 1000 $0.2146 10000 $0.2146	Buy Now
	SIB404DK-T1-GE3		1,143			1 $0.5365 10 $0.5365 100 $0.5365 1000 $0.2146 10000 $0.2146	Buy Now

SIB404DK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIB404DK-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 9A SC-75-6L		Original	PDF

SIB404DK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiB404DK SC-75 2002/95/EC SC-75-6L-Single SiB404DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiB404DK SC-75 2002/95/EC SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiB404DK Vishay Siliconix N-Channe12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiB404DK N-Channe12 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiB404DK SC-75 2002/95/EC SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiB404DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SiB404DK AN609, 9667u 5348m 5437m 0019m 0110u 9058u 5505u
Untitled Abstract: No abstract text available Text: SPICE Device Model SiB404DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiB404DK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiB404DK SC-75 2002/95/EC SC-75-6L-Single SiB404DK-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	PDF	SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK
SI1489EDH Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems	Original	PDF	SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH
SiB914 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	PDF	SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
SiB914 Abstract: SiA427DJ si2329ds si8802 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS	Original	PDF	SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802