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    Abstract: 8422 e8422 040-BE
    Text: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    PDF Si8422DB Si8422DB-T1-E1 18-Jul-08 8422 e8422 040-BE

    Untitled

    Abstract: No abstract text available
    Text: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    PDF Si8422DB Si8422DB-T1-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    PDF Si8422DB Si8422DB-T1-E1 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8422DB Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • Additional Backside Coating RoHS APPLICATIONS


    Original
    PDF Si8422DB Si8422DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12