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    SI8405DB Price and Stock

    Vishay Siliconix SI8405DB-T1-E1

    MOSFET P-CH 12V 3.6A 4MICROFOOT
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    DigiKey SI8405DB-T1-E1 Reel
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    SI8405DB-T1-E1 Digi-Reel 1
    • 1 $1.53
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    SI8405DB-T1-E1 Cut Tape
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    Vishay Siliconix SI8405DB-T1-E3

    MOSFET P-CH 12V 3.6A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8405DB-T1-E3 Reel
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    Vishay Siliconix SI8405DB-T1

    3600 MA, 12 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI8405DB-T1 2,425
    • 1 $0.72
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    SI8405DB Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si8405DB Vishay Intertechnology 12-V P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI8405DB Vishay Siliconix 12-V P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si8405DB SPICE Device Model Vishay 12-V P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI8405DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.6A 2X2 4-MFP Original PDF
    SI8405DB-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.6A 2X2 4-MFP Original PDF

    SI8405DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


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    PDF Si8405DB Si8405DB-T1-E1 11-Mar-11

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A


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    PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    20804

    Abstract: diode 8405 J-STD-020A Si8405DB
    Text: Si8405DB New Product Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V –4.9 0.070 @ VGS = –2.5 V –4.4 0.090 @ VGS = –1.8 V –4.0 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging


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    PDF Si8405DB S-20804--Rev. 01-Jul-02 20804 diode 8405 J-STD-020A

    Si8405DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si8405DB 05-Apr-02

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization:


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    PDF Si8405DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode 8405

    Abstract: J-STD-020A Si8405DB Si8405DB-T1 SI8405DB-T1-E1
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −4.9 0.070 @ VGS = −2.5 V −4.4 0.090 @ VGS = −1.8 V −4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


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    PDF Si8405DB Si8405DB-T1 Si8405DB-T1--E1 08-Apr-05 diode 8405 J-STD-020A SI8405DB-T1-E1

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A


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    PDF Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5222-X

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


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    PDF Si8405DB Si8405DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    J-STD-020A

    Abstract: Si8405DB
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V - 4.9 0.070 @ VGS = - 2.5 V - 4.4 0.090 @ VGS = - 1.8 V - 4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original
    PDF Si8405DB S-20804--Rev. 01-Jul-02 J-STD-020A

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX


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    PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si8413DB

    Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB


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    PDF Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB 275-mm t1/Si8413DB

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


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    PDF Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB

    diode 8405

    Abstract: 8405
    Text: Si8405DB New Product Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area rDS(on) (W)


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    PDF Si8405DB S-20066--Rev. 04-Mar-02 diode 8405 8405

    Si8405DB

    Abstract: Si8405DB-T1-E1
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


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    PDF Si8405DB Si8405DB-T1-E1 25lectual 18-Jul-08

    AN609

    Abstract: Si8405DB
    Text: Si8405DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si8405DB AN609 03-Mar-06

    Si8405DB

    Abstract: 24NC16
    Text: SPICE Device Model Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si8405DB S-52398Rev. 21-Nov-05 24NC16

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −4.9 0.070 @ VGS = −2.5 V −4.4 0.090 @ VGS = −1.8 V −4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


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    PDF Si8405DB Si8405DB-T1 Si8405DB-T1--E1 S-50066--Rev. 17-Jan-05

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx