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Catalog Datasheet	MFG & Type	PDF	Document Tags
specifications of MOSFET Abstract: No abstract text available Text: SPICE Device Model Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si7678DP 18-Jul-08 specifications of MOSFET
4802 Abstract: AN609 Text: Si7678DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si7678DP AN609 20-Jun-07 4802
SI7678DP-T1-E3 Abstract: a32g Text: New Product Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 75 0.0125 at VGS = 10 V 32g 39 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS	Original	PDF	Si7678DP Si7678DP-T1-E3 08-Apr-05 a32g
Untitled Abstract: No abstract text available Text: SPICE Device Model Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si7678DP S-71679Rev. 27-Aug-07
Si7678DP-T1-E3 Abstract: si7678 Text: New Product Si7678DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 75 0.0125 at VGS = 10 V 32g 39 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS	Original	PDF	Si7678DP Si7678DP-T1-E3 18-Jul-08 si7678