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    SI6882EDQ Search Results

    SI6882EDQ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6882EDQ Vishay Siliconix MOSFETs Original PDF

    SI6882EDQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si6882EDQ

    Abstract: No abstract text available
    Text: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET


    Original     		Si6882EDQ Si6882EDQ-T1 Si6882EDQ-T1-E3 S-60422-Rev. 20-Mar-06 PDF

    75A27

    Abstract: No abstract text available
    Text: Si6882EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 24 FEATURES rDS(on) (Ω) ID (A) 0.019 @ VGS = 4.5 V 7.5 0.021 @ VGS = 3.7 V 6.9 0.023 @ VGS = 2.5 V 6.5 0.027 @ VGS = 1.8 V 6.0 D TrenchFETr Power MOSFET


    Original     		Si6882EDQ 08-Apr-05 75A27 PDF

    AN609

    Abstract: Si6882EDQ 74038
    Text: Si6882EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6882EDQ AN609 02-Jul-07 74038 PDF

    Si6882EDQ

    Abstract: No abstract text available
    Text: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET


    Original     		Si6882EDQ Si6882EDQ-T1 Si6882EDQ-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET


    Original     		Si6882EDQ Si6882EDQ-T1 Si6882EDQ-T1-E3 08-Apr-05 PDF

    Si6882EDQ

    Abstract: No abstract text available
    Text: Si6882EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 24 FEATURES rDS(on) (Ω) ID (A) 0.019 @ VGS = 4.5 V 7.5 0.021 @ VGS = 3.7 V 6.9 0.023 @ VGS = 2.5 V 6.5 0.027 @ VGS = 1.8 V 6.0 D TrenchFETr Power MOSFET


    Original     		Si6882EDQ S-21574--Rev. 09-Sep-02 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    Siliconix mosfet guide

    Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
    Text: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9731 TSSOP-16 Si9371 Siliconix mosfet guide Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 PDF