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    SI5457 Search Results

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    SI5457 Price and Stock

    Vishay Siliconix SI5457DC-T1-GE3

    MOSFET P-CH 20V 6A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5457DC-T1-GE3 Reel 15,000 3,000
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    • 10000 $0.19952
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    Vishay Intertechnologies SI5457DC-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI5457DC-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI5457DC-T1-GE3 Reel 19 Weeks 3,000
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    • 10000 $0.15375
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    Mouser Electronics SI5457DC-T1-GE3 181,246
    • 1 $0.56
    • 10 $0.352
    • 100 $0.26
    • 1000 $0.203
    • 10000 $0.158
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    Verical SI5457DC-T1-GE3 15,000 3,000
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    SI5457DC-T1-GE3 6,000 3,000
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    SI5457DC-T1-GE3 51 37
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    • 100 $0.1692
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    Arrow Electronics SI5457DC-T1-GE3 15,000 19 Weeks 3,000
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    SI5457DC-T1-GE3 6,000 19 Weeks 3,000
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    SI5457DC-T1-GE3 Cut Strips 51 19 Weeks 1
    • 1 $0.2755
    • 10 $0.2374
    • 100 $0.1692
    • 1000 $0.1692
    • 10000 $0.1692
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    Newark SI5457DC-T1-GE3 Cut Tape 78,701 5
    • 1 $0.466
    • 10 $0.38
    • 100 $0.315
    • 1000 $0.315
    • 10000 $0.315
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    SI5457DC-T1-GE3 Reel 3,000
    • 1 $0.22
    • 10 $0.22
    • 100 $0.22
    • 1000 $0.22
    • 10000 $0.199
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    TTI SI5457DC-T1-GE3 Reel 12,000 3,000
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    TME SI5457DC-T1-GE3 1
    • 1 $0.78
    • 10 $0.48
    • 100 $0.313
    • 1000 $0.24
    • 10000 $0.24
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    Avnet Asia SI5457DC-T1-GE3 21 Weeks 3,000
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    EBV Elektronik SI5457DC-T1-GE3 20 Weeks 3,000
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    SI5457 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5457DC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A CHIPFET Original PDF

    SI5457 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI5457DC

    Abstract: si5457 marking code bt
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original
    PDF Si5457DC 2002/95/EC Si5457DC-T1-GE3 18-Jul-08 si5457 marking code bt

    636127

    Abstract: No abstract text available
    Text: Si5457DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si5457DC AN609, 3452u 9300m 3515m 8687u 0478m 8691m 9725m 636127

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si5457DC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original
    PDF Si5457DC 2002/95/EC Si5457DC-Telectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5457DC www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si5457DC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original
    PDF Si5457DC 2002/95/EC Si5457DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original
    PDF Si5457DC 2002/95/EC Si5457DC-emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5457DC

    Abstract: marking code bt VISHAY TSOP-6 MARKING CODE 6A SI5457
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original
    PDF Si5457DC 2002/95/EC Si5457DC-T1-GE3 11-Mar-11 marking code bt VISHAY TSOP-6 MARKING CODE 6A SI5457

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836