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    Vishay Siliconix SI5411EDU-T1-GE3

    MOSFET P-CH 12V 25A PPAK
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    SI5411EDU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5411EDU-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 25A PPAK CHIPFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)


    Original     		PDF Si5411EDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)


    Original     		PDF Si5411EDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)


    Original     		PDF Si5411EDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)


    Original     		PDF Si5411EDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si542

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint


    Original     		PDF Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406