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    SI4947 Price and Stock

    Vishay Siliconix SI4947ADY-T1-E3

    MOSFET 2P-CH 30V 3A 8SOIC
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    RS SI4947ADY-T1-E3 Bulk 2,500
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    Quest Components SI4947ADY-T1-E3 42
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    Vishay Siliconix SI4947ADY-T1-GE3

    MOSFET 2P-CH 30V 3A 8SOIC
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    Vishay Intertechnologies SI4947ADY-T1-E3

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    Bristol Electronics SI4947ADY-T1-E3 958
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    Quest Components SI4947ADY-T1-E3 1,668
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    SI4947ADY-T1-E3 766
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    . SI4947ADY

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    Bristol Electronics SI4947ADY 500
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    Vishay Siliconix SI4947DY

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    Bristol Electronics SI4947DY 275
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    ComSIT USA SI4947DY 2,049
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    SI4947 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4947ADY Vishay Intertechnology Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4947ADY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    Si4947ADY SPICE Device Model Vishay Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4947ADY-T1 Vishay Intertechnology Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4947ADY-T1 Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4947ADY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 3A 8-SOIC Original PDF
    SI4947ADY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 3A 8-SOIC Original PDF
    Si4947DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4947DY Vishay Intertechnology Dual P-Channel 30-V (D-S) Rated MOSFET Original PDF
    Si4947DY SPICE Device Model Vishay Dual P-Channel Enhancement-Mode MOSFET Original PDF

    SI4947 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    *4947ad

    Abstract: No abstract text available
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 *4947ad

    Untitled

    Abstract: No abstract text available
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4947ADY

    Abstract: 39A2 Si4947ADY SPICE Device Model
    Text: SPICE Device Model Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4947ADY 18-Jul-08 39A2 Si4947ADY SPICE Device Model

    Si4947ADY

    Abstract: Si4947ADY-T1
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4947ADY


    Original     		PDF Si4947ADY Si4947ADY-T1 08-Apr-05

    Si4947DY

    Abstract: No abstract text available
    Text: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4947DY S-49520--Rev. 18-Dec-96

    Si4947DY

    Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
    Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8


    Original     		PDF Si9953DY Si4947DY Si9947DY Si6953DQ Si6955DQ 51296--Rev. 18-Dec-96

    Si9947DY

    Abstract: Si4947DY Si4953DY Si6955DQ si6955
    Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ


    Original     		PDF Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96 si6955

    Untitled

    Abstract: No abstract text available
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4947ADY


    Original     		PDF Si4947ADY Si4947ADY-T1 10any 18-Jul-08

    Si4947ADY

    Abstract: SI4947 *4947a Si4947ADY SPICE Device Model
    Text: SPICE Device Model Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4947ADY S-60409Rev. 20-Mar-06 SI4947 *4947a Si4947ADY SPICE Device Model

    Si4947DY

    Abstract: No abstract text available
    Text: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4947DY 18-Jul-08

    Si4947DY

    Abstract: No abstract text available
    Text: Si4947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4947DY S-47958--Rev. 15-Apr-96

    Si4947ADY

    Abstract: Si4947ADY-T1-E3 Si4947ADY-T1-GE3
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 11-Mar-11

    Si4947ADY

    Abstract: No abstract text available
    Text: Si4947ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = –10 V "3.9 0.135 @ VGS = –4.5 V "3.0 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		PDF Si4947ADY S-00024--Rev. 24-Jan-00

    Si4947DY

    Abstract: Si4947DY SPICE Device Model
    Text: SPICE Device Model Si4947DY Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4947DY 0-to-10V 27-Mar-03 Si4947DY SPICE Device Model

    9571

    Abstract: datasheet 2837 mosfet AN609 Si4947ADY 42746
    Text: Si4947ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4947ADY AN609 19-Mar-07 9571 datasheet 2837 mosfet 42746

    Untitled

    Abstract: No abstract text available
    Text: Si4947ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = –10 V "3.9 0.135 @ VGS = –4.5 V "3.0 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET


    Original     		PDF Si4947ADY S-00024--Rev. 24-Jan-00

    Si4947DY

    Abstract: No abstract text available
    Text: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4947DY S-49520--Rev. 18-Dec-96

    Si4947DY

    Abstract: No abstract text available
    Text: Si4947DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.085 @ VGS = -10 V "3.5 0.19 @ VGS = -4.5 V "2.5 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 PĆChannel MOSFET PĆChannel MOSFET


    Original     		PDF Si4947DY S45532Rev.

    SI9947DY

    Abstract: Si4947DY Si4953DY Si6955DQ
    Text: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ


    Original     		PDF Si9947DY Si4947DY Si4953DY Si6955DQ S-47958--Rev. 15-Apr-96

    Si9400DY

    Abstract: Si4947DY Si6953DQ
    Text: Si9400DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ S S SO-8 NC 1 8


    Original     		PDF Si9400DY Si4947DY Si6953DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 11-Mar-11

    Si4947DY

    Abstract: Si6953DQ Si9400DY
    Text: Si9400DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ S S SO-8 NC 1 8


    Original     		PDF Si9400DY Si4947DY Si6953DQ S-47958--Rev. 15-Apr-96

    Si4947ADY

    Abstract: Si4947ADY SPICE Device Model
    Text: SPICE Device Model Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4947ADY 0-to-10V 24-Mar-03 Si4947ADY SPICE Device Model

    s169

    Abstract: si6955 3V02 51296
    Text: T E M IC SÌ9953DY Semiconductors Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V r DS(on)(^) 0.25 @ VGs= -1 0 V 0.40 @ VGs = -A5 V -20 I d (A) ±2.3 ±1.5 Recommended upgrade: Si4947DY or S19947DY Lower pro file Ismaller size see : S16953DQ or Si6955DQ


    OCR Scan     		PDF 9953DY Si4947DY S19947DY S16953DQ Si6955DQ -51296--Rev. 18-Dec-96 S-51296--Rev. s169 si6955 3V02 51296