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    SI4914 Search Results

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    SI4914 Price and Stock

    Vishay Siliconix SI4914DY-T1-E3

    MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
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    DigiKey SI4914DY-T1-E3 Digi-Reel 1
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    SI4914DY-T1-E3 Reel 2,500
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    SI4914DY-T1-E3 Cut Tape 1
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    Vishay Siliconix SI4914BDY-T1-E3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    Vishay Siliconix SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    DigiKey SI4914BDY-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI4914BDY-T1-GE3

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    Bristol Electronics SI4914BDY-T1-GE3 8,685
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    Quest Components SI4914BDY-T1-GE3 6,948
    • 1 $1.92
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    Vishay Intertechnologies SI4914BDY-T1-E3

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    Bristol Electronics SI4914BDY-T1-E3 7,757
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    SI4914 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4914BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF
    SI4914BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF
    SI4914DY Vishay Siliconix MOSFETs Original PDF
    SI4914DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.5A 8-SOIC Original PDF

    SI4914 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4914b

    Abstract: si4914 Si4914BDY
    Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si4914BDY 18-Jul-08 si4914b si4914

    Si4914B

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 11-Mar-11 Si4914B

    3452-2

    Abstract: AN609 Si4914DY si4914
    Text: Si4914DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4914DY AN609 12-Jun-07 3452-2 si4914

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


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    PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4914b

    Abstract: Si4914BDY-T1-E3
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d VDS (V) Channel-1 30 Channel-2


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    PDF Si4914BDY 08-Apr-05 si4914b Si4914BDY-T1-E3

    80266

    Abstract: Si4914DY
    Text: SPICE Device Model Si4914DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si4914DY 18-Jul-08 80266

    Untitled

    Abstract: No abstract text available
    Text: Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V


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    PDF Si4914DY Si4914DY-T1-E3 08-Apr-05

    Si4914DY-T1-E3

    Abstract: Si4914DY
    Text: Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V


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    PDF Si4914DY 18-Jul-08 Si4914DY-T1-E3

    Si4914B

    Abstract: si4914 si4914bdy Si4914BDY-T1-E3 SI4914BD
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


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    PDF Si4914BDY 2002/95/EC 18-Jul-08 Si4914B si4914 Si4914BDY-T1-E3 SI4914BD

    AN609

    Abstract: 72482 si4914bdy 56181
    Text: Si4914BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4914BDY AN609 16-Oct-07 72482 56181

    SI4914BDY-T1-E3

    Abstract: SI4914BDY Si4914DY Si4914DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4914BDY vs. Si4914DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4914BDY-T1-E3 replaces Si4914DY-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si4914BDY Si4914DY Si4914BDY-T1-E3 Si4914DY-T1-E3 28-Feb-08

    si4914dy

    Abstract: No abstract text available
    Text: Si4914DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 • LITTLE FOOT Plus Integrated Schottky • 100 % Rg Tested ID (A) 0.023 at VGS = 10 V 7.0 0.032 at VGS = 4.5 V


    Original
    PDF Si4914DY Si4914DY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V


    Original
    PDF Si4914DY Si4914DY--E3 Si4914DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4914BDY-T1-E3

    Abstract: si4914bdy
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC 11-Mar-11 Si4914BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4914DY

    Abstract: S408 si4914dy-t1-e3
    Text: Si4914DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.023 @ VGS = 10 V 7.0 0.032 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.027 @ VGS = 4.5 V


    Original
    PDF Si4914DY S-40855--Rev. 03-May-04 S408 si4914dy-t1-e3

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original
    PDF Si4914BDY Si4914BDY-T1-E3 Si4914BDY-T1-GE3 18-Jul-08

    813LN

    Abstract: 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF
    Text: 1 2 3 4 6 7 8 EW6 VCC_CORE CPU CORE 5 Page:26 CLOCK GEN ICS951413CGLFT A +3VPCU +3V_S5/+3VSUS +3V CELERON-M/PENTIUM-M +3VPCU +3V_S5 A Page:4 +3VSUS INTEL Mobile_479 CPU +3V Page:2, 3 +5VSUS +5VSUS/+5V +12V +5V Page:24 +12V HOST BUS 400MHZ +1.8VSUS +1.8VSUS/+1.8V


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    PDF ICS951413CGLFT 400MHZ RC410MB/RC410MD PCI1510A 158K-0402-LF 1000P/50V-LF 174K-0603-LF 7K-0402-LF 1000P/50V-LF 0R-0603-LF 813LN 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF

    ICS9LP306

    Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772
    Text: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS


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    PDF R5000 D5000 R5004 SW5004 21SUYC S5005 S5004 S5001 C5002 1000PF ICS9LP306 Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772

    cx3804

    Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
    Text: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS


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    PDF 1066MHz 800MHz IT8752E RTL8111C RJ45/RJ11 G50VX D8107 G60VX cx3804 pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118

    TAIMAG HD 081 A

    Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
    Text: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2


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    PDF MEROM/965-PM/ICH8-M/NB8P-GS CK505) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ISL6227 FDS2501 TPS51116 MAX1844 TAIMAG HD 081 A ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627

    mcp67m

    Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
    Text: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON


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    PDF AMD/MCP67MV/MCP67D MCP67MV/D 33MHz FDW2501 FDW2501 ISL6227 MAX8632 mcp67m MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833

    attansic f1

    Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
    Text: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2


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    PDF 133/166MHz RC415ME SB600 33MHz ITE8510E ICS951463AGLFT L78L05 F02JK2E) LM4040BIM SI9183DT attansic f1 RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106