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    SI419 Price and Stock

    Vishay Siliconix SI4190BDY-T1-GE3

    N-CHANNEL 100 V (D-S) MOSFET SO-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4190BDY-T1-GE3 Cut Tape 8,858 1
    • 1 $2.9
    • 10 $1.876
    • 100 $2.9
    • 1000 $0.9651
    • 10000 $0.9651
    		Buy Now
    SI4190BDY-T1-GE3 Digi-Reel 8,858 1
    • 1 $2.9
    • 10 $1.876
    • 100 $2.9
    • 1000 $0.9651
    • 10000 $0.9651
    		Buy Now
    SI4190BDY-T1-GE3 Reel 7,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.87362
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    Vishay Siliconix SI4190ADY-T1-GE3

    MOSFET N-CH 100V 18.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4190ADY-T1-GE3 Digi-Reel 2,390 1
    • 1 $2.59
    • 10 $1.669
    • 100 $2.59
    • 1000 $0.84693
    • 10000 $0.84693
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    SI4190ADY-T1-GE3 Cut Tape 2,390 1
    • 1 $2.59
    • 10 $1.669
    • 100 $2.59
    • 1000 $0.84693
    • 10000 $0.84693
    		Buy Now
    SI4190ADY-T1-GE3 Reel 2,300 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.74925
    		Buy Now

    Vishay Siliconix SI4196DY-T1-E3

    MOSFET N-CH 20V 8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4196DY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21768
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    Vishay Siliconix SI4196DY-T1-GE3

    MOSFET N-CH 20V 8A 8SO
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    DigiKey SI4196DY-T1-GE3 Reel
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    Vishay Siliconix SI4190DY-T1-GE3

    MOSFET N-CH 100V 20A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4190DY-T1-GE3 Digi-Reel 1
    • 1 $2.35
    • 10 $2.35
    • 100 $2.35
    • 1000 $2.35
    • 10000 $2.35
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    SI4190DY-T1-GE3 Cut Tape
    • 1 -
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    Find more SI419 price and stock on Findchips.com

    SI419 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4190ADY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 18.4A 8SO Original PDF
    SI4190DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 20A 8-SOIC Original PDF
    SI4196DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC Original PDF
    SI4196DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC Original PDF

    SI419 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    63826

    Abstract: No abstract text available
    Text: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4190ADY Si4190ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63826

    63826

    Abstract: Si4190ADY
    Text: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4190ADY Si4190ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63826

    Si4190ADY

    Abstract: si41
    Text: SPICE Device Model Si4190ADY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4190ADY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si41

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4190DY 2002/95/EC Si4190DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: si419
    Text: Si4196DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4196DY AN609, 11-Nov-09 AN609 si419

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4190DY 2002/95/EC Si4190DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF Si4190ADY Si4190ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    2128S

    Abstract: si41
    Text: SPICE Device Model Si4196DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4196DY 18-Jul-08 2128S si41

    si41

    Abstract: si4196
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 18-Jul-08 si41 si4196

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DIODE 2141

    Abstract: si4190
    Text: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4190DY 2002/95/EC Si4190DY-T1-GE3 18-Jul-08 DIODE 2141 si4190

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4190DY 2002/95/EC Si4190DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4190DY 2002/95/EC Si4190DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 11-Mar-11

    SI4190DY

    Abstract: No abstract text available
    Text: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4190DY 2002/95/EC Si4190DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs