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    SI4143DY Price and Stock

    Vishay Siliconix SI4143DY-T1-GE3

    MOSFET P-CHANNEL 30V 25.3A 8SO
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    DigiKey SI4143DY-T1-GE3 Cut Tape 1
    • 1 $1.16
    • 10 $0.73
    • 100 $1.16
    • 1000 $0.33742
    • 10000 $0.33742
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    SI4143DY-T1-GE3 Reel 2,500
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    • 10000 $0.29987
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    Vishay Intertechnologies SI4143DY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4143DY-T1-GE3)
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    Avnet Americas SI4143DY-T1-GE3 Reel 17 Weeks 5,000
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    • 10000 $0.24416
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    Mouser Electronics SI4143DY-T1-GE3 504
    • 1 $1.16
    • 10 $0.73
    • 100 $0.48
    • 1000 $0.373
    • 10000 $0.3
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    Verical SI4143DY-T1-GE3 2,500 2,500
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    Newark SI4143DY-T1-GE3 Reel 5,000
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    • 10000 $0.316
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    SI4143DY-T1-GE3 Cut Tape 5
    • 1 $0.75
    • 10 $0.616
    • 100 $0.452
    • 1000 $0.452
    • 10000 $0.452
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    TTI SI4143DY-T1-GE3 Reel 5,000
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    • 10000 $0.296
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    EBV Elektronik SI4143DY-T1-GE3 18 Weeks 2,500
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    Vishay Huntington SI4143DY-T1-GE3

    MOSFET P-CHANNEL 30V 25.3A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4143DY-T1-GE3 10,000
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    • 1000 $0.316
    • 10000 $0.283
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    SI4143DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4143DY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 25.3A 8SO Original PDF

    SI4143DY Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6


    Original     		PDF Si4143DY Si4143DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4143DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si4143DY AN609, 2643m 6512m 8170m 4792m 2540m 1945m 5612m 26-Feb-2014

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si4143DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12