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    SI2325 Search Results

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    SI2325 Price and Stock

    Vishay Siliconix SI2325DS-T1-E3

    MOSFET P-CH 150V 530MA SOT23-3
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    DigiKey SI2325DS-T1-E3 Reel 15,000 3,000
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    RS SI2325DS-T1-E3 Bulk 3,000
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    ES Components SI2325DS-T1-E3
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    New Advantage Corporation SI2325DS-T1-E3 6,000 1
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    Vishay Siliconix SI2325DS-T1-GE3

    MOSFET P-CH 150V 530MA SOT23-3
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    DigiKey SI2325DS-T1-GE3 Digi-Reel 12,529 1
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    SI2325DS-T1-GE3 Cut Tape 12,529 1
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    SI2325DS-T1-GE3 Reel 6,000 3,000
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    RS SI2325DS-T1-GE3 Bulk 3,000
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    Quest Components SI2325DS-T1-GE3 2
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    Vishay Siliconix SI2325DS-T1-BE3

    P-CHANNEL 150-V (D-S) MOSFET
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    DigiKey SI2325DS-T1-BE3 Cut Tape 1,959 1
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    SI2325DS-T1-BE3 Digi-Reel 1,959 1
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    SI2325DS-T1-BE3 Reel 3,000
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    PFLITSCH GmbH & Co KG EMBFSI-23-25-BG

    STRAIGHT CONDUIT FITTING WITH IN
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    DigiKey EMBFSI-23-25-BG Bag 50
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    PFLITSCH GmbH & Co KG EMBFSI-23-25-BK

    STRAIGHT CONDUIT FITTING WITH IN
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    DigiKey EMBFSI-23-25-BK Bag 50
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    SI2325 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2325DS Vishay P-Channel Power MOSFET Original PDF
    SI2325DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 530MA SOT23-3 Original PDF
    SI2325DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 530MA SOT-23 Original PDF

    SI2325 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


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    PDF Si2325DS O-236 OT-23) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original
    PDF Si2325DS O-236 OT-23) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2325DS

    Abstract: No abstract text available
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original
    PDF Si2325DS O-236 OT-23) 18-Jul-08

    Si2325DS

    Abstract: D5 marking
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


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    PDF Si2325DS O-236 OT-23) S-42449--Rev. 10-Jan-05 D5 marking

    n mosfet pspice parameters

    Abstract: AN609 Si2325DS 25393
    Text: Si2325DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si2325DS AN609 04-May-07 n mosfet pspice parameters 25393

    Si2325DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2325DS 18-Jul-08

    Si2325DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2325DS S-60260Rev. 27-Feb-06

    Si2325DS

    Abstract: si2325 P-Channel TrenchFET Power MOSFET SOT-23
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original
    PDF Si2325DS O-236 OT-23) 11-Mar-11 si2325 P-Channel TrenchFET Power MOSFET SOT-23

    Si2325DS

    Abstract: MS1117
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original
    PDF Si2325DS O-236 OT-23) 18-Jul-08 MS1117

    Untitled

    Abstract: No abstract text available
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original
    PDF Si2325DS O-236 OT-23) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si2325DS

    Abstract: No abstract text available
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original
    PDF Si2325DS O-236 OT-23) 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2325DS www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF Si2325DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    P-Channel TrenchFET Power MOSFET SOT-23

    Abstract: marking code vishay SILICONIX sot-23
    Text: Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Ultra Low On-Resistance


    Original
    PDF Si2325DS O-236 OT-23) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. P-Channel TrenchFET Power MOSFET SOT-23 marking code vishay SILICONIX sot-23

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU304C – April 2009 – Revised November 2011 TPS23754EVM-383 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-383 . TPS23754EVM-383 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant


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    PDF SLVU304C TPS23754EVM-383 TPS23754 TPS23754 TPS23754EVM-383) TPS23754.

    PH21NQ15

    Abstract: 24v active clamp forward converter n-channel 500w power mosfet PA1494 362 Si7850 Q291 pe 6197 cross reference CG 220 PA1494 BAS521
    Text: LTC3900 Synchronous Rectifier Driver for Forward Converters FEATURES DESCRIPTION n The LTC 3900 is a secondary-side synchronous rectifier driver designed to be used in isolated forward converter power supplies. The chip drives N-channel rectifier MOSFETs and accepts pulse sychronization from the


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    PDF LTC3900 4700pF LTC3900 LT3781 LTC3803/ LTC3803-3 200kHz/300kHz LTC3901 LTC3900, LT4430 PH21NQ15 24v active clamp forward converter n-channel 500w power mosfet PA1494 362 Si7850 Q291 pe 6197 cross reference CG 220 PA1494 BAS521

    A3028

    Abstract: 20000 watts power amplifier circuit diagrams csd18503 nxp mosfet soa derating
    Text: TPS2482 TPS2483 www.ti.com SLUSAW1 – DECEMBER 2012 36-V Hotswap Controller with Precision I2C Power Monitoring Check for Samples: TPS2482, TPS2483 FEATURES DESCRIPTION • • • The TPS2482 and TPS2483 provide hotswap control and precision monitoring for 9-V to 36-V applications.


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    PDF TPS2482 TPS2483 TPS2482, 20-Pin TPS2483 16-bit A3028 20000 watts power amplifier circuit diagrams csd18503 nxp mosfet soa derating

    Si2325

    Abstract: PA2720 DC1317A-H FDMC8854 si7818 DC1317A DC1317A-A LT1952 power supply 100v 30a schematic 1317a
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1317A-E ACTIVE RESET ISOLATED DC/DC POWER CONVERTER LT1952 DESCRIPTION Demonstration circuit 1317A-E is isolated input to high current output 1/8th Brick footprint converter featuring the LT 1952 switching controller with Active Reset circuit. The Active Reset circuit can improve the efficiency in wide input voltage applications. Also, the Active Reset allows the implementation of self-driven synchronous secondary rectifiers


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    PDF 317A-E LT1952 317A-E DC1317A-E 260kHz DC1317 100uF, DC1317A Si2325 PA2720 DC1317A-H FDMC8854 si7818 DC1317A-A LT1952 power supply 100v 30a schematic 1317a

    DC1317A-H

    Abstract: DC1317A-A LT4430 LT1952 48v to 5v dc schematic Si7430
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1317A-A ACTIVE RESET ISOLATED 48V INPUT TO 3.3V @30A DC/DC POWER CONVERTER LT1952 DESCRIPTION Demonstration circuit 1317A-A is isolated input to high current output 1/8th Brick footprint converter featuring the LT 1952 switching controller with Active Reset circuit. The Active Reset circuit can improve the efficiency in wide input voltage applications. Also, the Active Reset allows the implementation of self-driven synchronous secondary rectifiers


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    PDF 317A-A LT1952 317A-A DC1317A-A 300kHz DC1317 DC1317A DC1317A-H LT4430 LT1952 48v to 5v dc schematic Si7430

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


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    PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    Untitled

    Abstract: No abstract text available
    Text: LT3752/LT3752-1 Active Clamp Synchronous Forward Controllers with Internal Housekeeping Controller Features Description Input Voltage Range: LT3752: 6.5V to 100V, LT3752-1:Limited Only by External Components n Internal Housekeeping DC/DC Controller n Programmable Volt-Second Clamp


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    PDF LT3752/LT3752-1 LT3752: LT3752-1 100kHz 500kHz) 3752/LT3752-1 LTC3722/LTC3722-2 LT3748 MSOP-16 LT3798

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X