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    SI2301BDS Price and Stock

    Vishay Siliconix SI2301BDS-T1-GE3

    MOSFET P-CH 20V 2.2A SOT23-3
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    DigiKey SI2301BDS-T1-GE3 Cut Tape 16,669 1
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    SI2301BDS-T1-GE3 Digi-Reel 16,669 1
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    SI2301BDS-T1-GE3 Reel 9,000 3,000
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    Quest Components SI2301BDS-T1-GE3 5
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    Vishay Siliconix SI2301BDS-T1-BE3

    P-CHANNEL 2.5-V (G-S) MOSFET
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    DigiKey SI2301BDS-T1-BE3 Cut Tape 6,305 1
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    SI2301BDS-T1-BE3 Digi-Reel 6,305 1
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    SI2301BDS-T1-BE3 Reel 6,000 3,000
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    Vishay Siliconix SI2301BDS-T1-E3

    MOSFET P-CH 20V 2.2A SOT23-3
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    SI2301BDS-T1-E3 Digi-Reel 1
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    SI2301BDS-T1-E3 Reel 3,000
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    RS SI2301BDS-T1-E3 Bulk 13,600 3,000
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    Quest Components SI2301BDS-T1-E3 2,770
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    SI2301BDS-T1-E3 1,117
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    New Advantage Corporation SI2301BDS-T1-E3 24,000 1
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    Vishay Intertechnologies SI2301BDS-T1-E3

    Trans MOSFET P-CH 20V 2.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2301BDS-T1-E3)
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    Avnet Americas SI2301BDS-T1-E3 Reel 6,000 3,000
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    SI2301BDS-T1-E3 Ammo Pack 10 Weeks, 4 Days 1
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    Verical SI2301BDS-T1-E3 31,642 391
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    SI2301BDS-T1-E3 3,000 3,000
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    Newark SI2301BDS-T1-E3 Cut Tape 33,272 1
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    SI2301BDS-T1-E3 Reel 1
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    Bristol Electronics SI2301BDS-T1-E3 4,466 9
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    SI2301BDS-T1-E3 1,284
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    Quest Components SI2301BDS-T1-E3 4,292
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    SI2301BDS-T1-E3 3,096
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    SI2301BDS-T1-E3 1,027
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    SI2301BDS-T1-E3 745
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    SI2301BDS-T1-E3 99
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    EBV Elektronik SI2301BDS-T1-E3 9,000 14 Weeks 3,000
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    Vishay Intertechnologies SI2301BDS-T1-GE3

    Trans MOSFET P-CH 20V 2.2A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2301BDS-T1-GE3)
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    Avnet Americas SI2301BDS-T1-GE3 Reel 3,000
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    Verical SI2301BDS-T1-GE3 3,000 3,000
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    SI2301BDS-T1-GE3 179 44
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    Arrow Electronics SI2301BDS-T1-GE3 3,000 13 Weeks 3,000
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    SI2301BDS-T1-GE3 Cut Strips 179 13 Weeks 1
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    SI2301BDS-T1-GE3 Reel 3,000
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    TTI SI2301BDS-T1-GE3 Reel 3,000
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    TME SI2301BDS-T1-GE3 1,758 1
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    SI2301BDS Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 Original PDF
    Si2301BDS SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDST1 Vishay MOSFET,P CHAN,2.5V,SOT23 Original PDF
    Si2301BDS-T1 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-T1-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 T/R Original PDF
    SI2301BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    SI2301BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF

    SI2301BDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2301

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    si2301cds-t1-ge3

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3


    Original     		PDF Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05

    Si2301CDS

    Abstract: SI2301CDS-T1-GE3 Si2301CDS-T1-E3 MOSFET SOT-23 Si2301BDS-T1-GE3 SI2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Specification Comparison Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3 Si2301CDS-T1-GE3 or Si2301CDS-T1-E3 replaces Si2301BDS-T1


    Original     		PDF Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1 MOSFET SOT-23

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model

    Si2301

    Abstract: Si2301BDS
    Text: Si2301BDS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = -4.5 V -2.4 0.150 @ VGS = -2.5 V -2.0 VDS (V) -20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 S-22048--Rev. 18-Nov-02

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 08-Apr-05 Si2301BDS SPICE Device Model

    Untitled

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11

    AN609

    Abstract: Si2301BDS
    Text: Si2301BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2301BDS AN609 03-May-07

    SI2301DS

    Abstract: SI2301DS* equivalent Si2301DS-T1 Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Specification Comparison Vishay Siliconix Si2301BDS vs. Si2301DS Description: P-Channel, 2.5 V G-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2301BDS-T1 Replaces Si2301DS-T1 Si2301BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2301DS-T1


    Original     		PDF Si2301BDS Si2301DS OT-23 Si2301BDS-T1 Si2301DS-T1 Si2301BDS-T1-E3 06-Nov-06 SI2301DS* equivalent

    Si2301BDS

    Abstract: Si2301BDS SPICE Device Model
    Text: SPICE Device Model Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2301BDS 08-Nov-02 Si2301BDS SPICE Device Model

    SI2301BDS-T1

    Abstract: SI2301BDS-T1-E3 Si2301ADS Si2301ADS-T1 MOSFET P-channel SOT-23 SI2301BDS
    Text: Specification Comparison Vishay Siliconix Si2301BDS vs. Si2301ADS Description: P-Channel, 2.5 V G-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2301BDS-T1 Replaces Si2301ADS-T1 Si2301BDS-T1-E3 (Lead (Pb)-free version) Replaces Si2301ADS-T1


    Original     		PDF Si2301BDS Si2301ADS OT-23 Si2301BDS-T1 Si2301ADS-T1 Si2301BDS-T1-E3 06-Nov-06 MOSFET P-channel SOT-23

    70314

    Abstract: Si2301BDS
    Text: SPICE Device Model Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2301BDS 18-Jul-08 70314

    AES1610

    Abstract: T1C6 X5H012000FI1H Compal Electronics SI2301BDS-T1-E3 SI2301BDS-T1-E3_SOT23-3 s-4272
    Text: 5 4 3 2 1 D D GND Vout FLAGB ON 2 4 5 +3.3V_REG 20mils 1 3 Vin U2 FPF2005_SC70-5 20mils 1 +3VS 20mils Q2 SI2301BDS-T1-E3_SOT23-3 +VDDA D S +CL3.3 1 20mils 1 1 3 2 C 1+VDD_3.3 D6 +CL3.3 OVC_SENSE OVC_VDDA OVC_VDD D10 OVC_VDD OVC_DET# C8 2 D9 OVC_DET# AES1610


    Original     		PDF FPF2005 SC70-5 20mils 16V4Z SI2301BDS-T1-E3 OT23-3 16V4Z AES1610 T1C6 X5H012000FI1H Compal Electronics SI2301BDS-T1-E3_SOT23-3 s-4272

    LS4201

    Abstract: 4201P D3 SOT23-6 LS-4201P AES1610 LS-4201 sot23-6 layout h1 sot23 diode LS420 A6 SOT23-6
    Text: A B C D E COMPAL CONFIDENTIAL 1 JAL90 LS-4201P FINGERPRINT BOARD DA600007910 1.0 2008/4/11 MODEL NAME: PCB NAME: COMPAL P/N: REVISION: DATE: 1 +VDDA 1 SI2301BDS-T1-E3_SOT23-3 Q1 3 1 20mils 2 0.1U_0402_16V4Z 2 1 C2 0.1U_0402_16V4Z 1 2 R1 1.8 +-1% 0402 2 C3


    Original     		PDF JAL90 LS-4201P DA600007910 SI2301BDS-T1-E3 OT23-3 16V4Z 20mils LS4201 4201P D3 SOT23-6 AES1610 LS-4201 sot23-6 layout h1 sot23 diode LS420 A6 SOT23-6

    LS-4683P

    Abstract: AES1610 Compal Electronics AES1610-C-DF-TR-GO00-AC
    Text: A B C D E COMPAL CONFIDENTIAL 1 KALA0 LS-4683P REV1.0 FP/B DA60000A310 1.0 2008/11/27 MODEL NAME: PCB NAME: COMPAL P/N: REVISION: DATE: 1 +VDDA 1 SI2301BDS-T1-E3_SOT23-3 Q1 3 2 ON 4 GND 2 0.1U_0402_16V4Z 2 <BOM Structure> 2 C3 C4 0.1U_0402_16V4Z <BOM Structure>


    Original     		PDF LS-4683P DA60000A310 SI2301BDS-T1-E3 OT23-3 16V4Z 20mils AES1610 Compal Electronics AES1610-C-DF-TR-GO00-AC

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3

    SI2301 equivalent

    Abstract: SI2301BDS Si2301 Si2301BDS-T1
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = - 4.5 V - 2.4 0.150 @ VGS = - 2.5 V - 2.0 VDS (V) - 20 TO-236 (SOT-23) G 1 3 S Ordering Information: Si2301BDS-T1 D 2 Top View Si2301 BDS (L1)* *Marking Code


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301 S-31990--Rev. 13-Oct-03 SI2301 equivalent

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    sl8z4

    Abstract: diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412
    Text: A B C D LWG2-D Block Diagram Discrete Mobile CPU CLK GEN. 4 IDT CV125PA Project code: 91.4Q801.001 PCB P/N : 55.4Q801.XXX REVISION : 06210-2 (Hannstar, ACCL) G792 Yonah 478 1.83G/2G/2.16G 4, 5 3 19 PCB STACKUP TOP TVO HOST BUS 400/533/667MHz LVDS DDR2 533/667MHz


    Original     		PDF TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4Q801 TPS51124 533/667MHz TPS51100 sl8z4 diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412

    LS-354LP

    Abstract: MDB41 C376-C378 Compal Electronics MDB2 Compal ls- vga Compal LS-354lp compal 100NF-50V ISL6269A
    Text: 5 4 2 1 PART 1 OF 7 35mil TP2 D TP3 35mil C 3 U1A TP1 35mil 35mil TP4 B TP5 TP_22mil_SM_top TP_22mil_SM_top TP6 PCIE_RXP0 PCIE_RXN0 AK33 AJ33 PCIE_RX0P PCIE_RX0N PCIE_RXP1 PCIE_RXN1 AJ35 AJ34 PCIE_RX1P PCIE_RX1N PCIE_RXP2 PCIE_RXN2 AH35 AH34 PCIE_RX2P PCIE_RX2N


    Original     		PDF 35mil RX10P RX10N RX11P RX11N RX12P RX12N RX13P RX13N LS-354LP MDB41 C376-C378 Compal Electronics MDB2 Compal ls- vga Compal LS-354lp compal 100NF-50V ISL6269A

    kb926

    Abstract: kb925 FBMA-L11-201209-221LMA30T compal Compal Electronics foxconn Compal Merom RT8203 mobile 478 SOCKET PIN VSS256
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Merom uFCPGA with Satna Rosa Platform 3 3 2007-07-24 REV:0.3 4 Compal Secret Data 2006/07/26 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF