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    SD 57A Price and Stock

    KEMET Corporation ESD-R-57A-1

    Ferrite Toroids / Ferrite Rings 61x32.4x24mm Mn-Zn Case and Tape
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    Mouser Electronics ESD-R-57A-1 12
    • 1 $20.95
    • 10 $11.49
    • 100 $11.13
    • 1000 $11.13
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    SoMLabs SLS18MP157A_650C_512R_uSD_0SF_C

    System-On-Modules - SOM VisionSOM module, STM32MP157A @ 650MHz, 512MB RAM, microSD, 0...+70C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SLS18MP157A_650C_512R_uSD_0SF_C
    • 1 $69.63
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    SoMLabs SLS18MP157A_650C_512R_uSD_1WB_C

    System-On-Modules - SOM VisionSOM module, STM32MP157A @ 650MHz, 512MB RAM, microSD, WiFi/BT, 0...+70C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SLS18MP157A_650C_512R_uSD_1WB_C
    • 1 $84.64
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    Taoglas Antenna Solutions GPSDSF.35.7.A.08

    Antennas GPSDSF.35.7.A.08 - 35mm GNSS SDARS Stacked Patch Antenna
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GPSDSF.35.7.A.08
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    Intel Corporation 82635DSD457ASIC

    Camera Development Tools RealSense Vision Processor D4 Board V5 (GMSL/FAKRA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 82635DSD457ASIC
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    Find more SD 57A price and stock on Findchips.com

    SD 57A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD-350

    Abstract: SD-350B 48v 50a power supply 107A CAPACITOR D7224
    Text: SD-350 350W Single Output DC-DC Converter series Features : 2:1 wide input range Protections:Short circuit/Over load/Over voltage/Over temperature 1500VDC I/O isolation Forced air cooling by built-in DC Fan 100% full load burn-in test 2 years warranty SPECIFICATION


    Original     		PDF SD-350 1500VDC SD-350B SD-350C 100mVp-p 120mVp-p SD-350B SD-350-SPEC SD-350 48v 50a power supply 107A CAPACITOR D7224

    EN55022 CISPR22 Class B

    Abstract: sd350 SD-350 SD-350B 24v 14.6A power supply 3504W
    Text: SD-350 350W Single Output DC-DC Converter series Features : 2:1 wide input range Protections:Short circuit/Over load/Over voltage/Over temperature 1500VDC I/O isolation Forced air cooling by built-in DC Fan 100% full load burn-in test 24V and 48V input voltage design refer to LVD


    Original     		PDF SD-350 1500VDC SD-350B SD-350C RIP17 SD-350B SD-350-SPEC EN55022 CISPR22 Class B sd350 SD-350 24v 14.6A power supply 3504W

    SD-350

    Abstract: SD-350B 96Vdc
    Text: SD-350 350W Single Output DC-DC Converter series Features : 2:1 wide input range Protections: Short circuit / Overload / Over voltage / Over temperature 1500VAC I/O isolation Forced air cooling by built-in DC Fan 100% full load burn-in test 24V and 48V input voltage design refer to LVD


    Original     		PDF SD-350 1500VAC SD-350B SD-350C 13max. 100KHz SD-350B SD-350-SPEC SD-350 96Vdc

    12V DC to 48v dc converter circuit diagram

    Abstract: 12V DC to 24V dC converter circuit diagram 24v to 5V 3A converter 48V DC to 12v dc converter circuit diagram dc-dc converter 48v to 24v 3a diagram Converter 24v to 12v SD-350 SD-350B
    Text: SD-350 350W Single Output DC-DC Converter series • Features : 2:1 wide input range Protections: Short circuit / Overload / Over voltage / Over temperature 1500VDC I/O isolation Forced air cooling by built-in DC Fan 100% full load burn-in test 24V and 48V input voltage design refer to LVD


    Original     		PDF SD-350 1500VDC SD-350B SD-350C 100KHz SD-350B SD-350-SPEC 12V DC to 48v dc converter circuit diagram 12V DC to 24V dC converter circuit diagram 24v to 5V 3A converter 48V DC to 12v dc converter circuit diagram dc-dc converter 48v to 24v 3a diagram Converter 24v to 12v SD-350

    Untitled

    Abstract: No abstract text available
    Text: SD-350 350W Single Output DC-DC Converter series Features : 2:1 wide input range Protections: Short circuit / Overload / Over voltage / Over temperature 1500VAC I/O isolation Forced air cooling by built-in DC Fan 100% full load burn-in test 24V and 48V input voltage design refer to LVD


    Original     		PDF SD-350 1500VAC SD-350B SD-350C 13max. 100KHz SD-350B SD-350-SPEC

    SD-350

    Abstract: SD-350B
    Text: SD-350 350W Single Output DC-DC Converter series Features : 2:1 wide input range Protections: Short circuit / Overload / Over voltage / Over temperature 1500VDC I/O isolation Forced air cooling by built-in DC Fan 100% full load burn-in test 24V and 48V input voltage design refer to LVD


    Original     		PDF SD-350 1500VDC SD-350B SD-350C 13max. 100KHz SD-350B SD-350-SPEC SD-350

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDP150N10 O-220 FDP150N10

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDI150N10 O-262

    FDP150N10

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP150N10 O-220 FDP150N10

    FDB150N10

    Abstract: marking 49a
    Text: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB150N10 FDB150N10 marking 49a

    FDI150N10

    Abstract: No abstract text available
    Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI150N10 O-262 FDI150N10

    to48c

    Abstract: 1397-CBGA stm-64 to stm-1
    Text: Tethys II SONET/SDH Multi-rate Framers OC-3/STM-1 to OC-192/ STM-64 Multi-Rate Solutions PEB2756AE/57AE Semiconductor Solutions for High Speed Communications and Fiber Optic Applications Features • • • • • • • • • • Differential CML 2.5 Gbps I/O interface


    Original     		PDF OC-192/ STM-64 PEB2756AE/57AE STS-192/STM-64 STS-48/STM-16 PEB2756AE PEB2757AE 1397-CBGA FLY1009 to48c stm-64 to stm-1

    SPM6M080-010D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE


    Original     		PDF SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D

    74HCT244 SMD

    Abstract: NSH-02SB-S2-TG30 bergstik MCM54800AJ70 4609X-101-103 Augat A08 smd transistor 41B toshiba c650 DSP56301 JP13
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 For More Information On This Product, Go to: www.freescale.com


    Original     		PDF DSP56301ADM DSP56301ADMUM/AD DSP56301 DSP56301ADM) TSM11001SDV TSM10301SDV E101MD1ABE 90HBW04S E121SD1AGE DSP56301ADMUM/AD, 74HCT244 SMD NSH-02SB-S2-TG30 bergstik MCM54800AJ70 4609X-101-103 Augat A08 smd transistor 41B toshiba c650 JP13

    motorola 1N4148

    Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
    Text: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module


    Original     		PDF DSP56301ADM DSP56301ADMUM/AD DSP56301 DSP56301ADM) Augat/RD1-MC6-P102-02 30-pin TSM11501SDV 14-pin TSM10701SDV 20-pin motorola 1N4148 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO

    AP9408

    Abstract: AP9408GH AP9408GJ
    Text: AP9408GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 10mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9408GH/J O-252 AP9408GJ) O-251 100us 100ms AP9408 AP9408GH AP9408GJ

    AP60T10GS

    Abstract: MOSFET VDS 20V TO-220
    Text: AP60T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 23mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP60T10GS/P O-220 O-263 AP60T10GP) 100us 100ms AP60T10GS MOSFET VDS 20V TO-220

    Untitled

    Abstract: No abstract text available
    Text: AP9408GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D 30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 10m 57A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9408GH/J O-252 AP9408GJ) O-251 Absolute100 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: A DEGSON Product S p e cification DEGSON ELECTRONICS CO., LTD. S p e c ific a t io n 1 Terminal block WS10-SD (2) End Cover (S ) (3) Adjacent Jumper r/. Ì (4) Alternate Jumper D-WS 10-SD 100 WFA-10 100 WFB-10 50 (5) Protective Warning Marker bobbs EEA-10


    OCR Scan     		PDF 10-SD 5/NS3515) WFA-10 WFB-10 EEA-10 00V/57A /24-8AWG

    Untitled

    Abstract: No abstract text available
    Text: SD-350 350W Single Output DC-DC C onverter series 1Features : 2:1 wide input range ProtectionsrShort eircuit/Over load/Over voltage/O ver tem perature 1500VDC I/O isolation Forced air cooling by built-in DC Fan ì 100% full load burn-in test il £ 24V and 48V input voltage design refer to LVD


    OCR Scan     		PDF SD-350 1500VDC 120mVp-p -16VDC 150mVp-p -30VDC 200mVp-p -53VDC 100mVp-p SD-350-SPEC

    TTL 74ls74

    Abstract: 74ls74 CI 7473 TTL 7474 7476 JK ttl 7474 14 PIN Jk 7476 7474 PIN DIAGRAM pin diagram 7474 7474 16 PIN
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL -TTL MASTER/SLAVE EDGE-TRIGGERED D55 9020 D60 9024, 54/74109, 54S/74S109, 54LS/74LS109 5 ui 9 D UJ -=pi (3 J Q 2 — J SD 0 CP Z o (3 4 K Ä Co “LT in > </> O a 3 -0 K Co ° I- 3 a. I- 3 O 4-0 Co ? 15 D61 54/7474, 54H/74H74,


    OCR Scan     		PDF 54S/74S109, 54LS/74LS109 54H/74H74, 54S/74S74, 54LS/74LS74 54H/74H73, 54H/74H73 54H/74H103 54S/74S113 54LS/74LS113 TTL 74ls74 74ls74 CI 7473 TTL 7474 7476 JK ttl 7474 14 PIN Jk 7476 7474 PIN DIAGRAM pin diagram 7474 7474 16 PIN

    Untitled

    Abstract: No abstract text available
    Text: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT40M70LVR O-264

    LG 57A

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT40M70LVR 400V 57A 0.070« ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT40M70LVR O-264 MIL-STD-750 O-264AA LG 57A

    LG 57A

    Abstract: 378r
    Text: A dvanced P o w er T e c h n o l o g yr Q D APT60M90JN 600V 57A 0.0900 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT60M90JN E145592 60M90JN APT60M90JN OT-227 LG 57A 378r