Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDI150N10 Search Results

    SF Impression Pixel

    FDI150N10 Price and Stock

    onsemi FDI150N10

    MOSFET N-CH 100V 57A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDI150N10 Tube 3,034 1
    • 1 $2.93
    • 10 $2.93
    • 100 $2.93
    • 1000 $1.19212
    • 10000 $1.19212
    		Buy Now
    Avnet Americas FDI150N10 Tube 17 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.2642
    • 10000 $1.122
    		Buy Now
    Mouser Electronics FDI150N10 776
    • 1 $2.93
    • 10 $1.6
    • 100 $1.46
    • 1000 $1.19
    • 10000 $1.19
    		Buy Now
    Newark FDI150N10 Bulk 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.59
    • 10000 $1.24
    		Buy Now
    Future Electronics FDI150N10 Tube 6 Weeks 800
    • 1 -
    • 10 -
    • 100 $1.28
    • 1000 $1.21
    • 10000 $1.16
    		Buy Now
    FDI150N10 Tube 17 Weeks 800
    • 1 -
    • 10 -
    • 100 $1.28
    • 1000 $1.21
    • 10000 $1.16
    		Buy Now
    Onlinecomponents.com FDI150N10
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.31
    • 10000 $1.31
    		Buy Now
    Richardson RFPD FDI150N10 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.19
    • 10000 $1.19
    		Buy Now
    Avnet Silica FDI150N10 18 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    EBV Elektronik FDI150N10 19 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    FDI150N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDI150N10 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 57A I2PAK Original PDF

    FDI150N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDI150N10 FDI150N10

    FDI150N10

    Abstract: No abstract text available
    Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI150N10 O-262 FDI150N10

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features Description • RDS on = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDI150N10

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDI150N10 O-262