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    SCHOTTKY B210 Search Results

    SCHOTTKY B210 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY B210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency


    Original
    PDF B2100 DS30021 B270-B2100

    B2100

    Abstract: B270 B280 B290
    Text: SPICE MODEL: B270 B280 B290 B2100 B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


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    PDF B2100 DS30021 B270-B2100 B2100 B270 B280 B290

    Untitled

    Abstract: No abstract text available
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


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    PDF B2100 MIL-STD-202, DS30021 B270-B2100

    B2100

    Abstract: B270 B280 B290
    Text: SPICE MODEL: B270 B280 B290 B2100 B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency


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    PDF B2100 DS30021 B270-B2100 B2100 B270 B280 B290

    B2100

    Abstract: Diode B2x B270 B280 B290 J-STD-020A
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B270 B280 B290 B2100 Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency


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    PDF B2100 DS30021 B270-B2100 B2100 Diode B2x B270 B280 B290 J-STD-020A

    B2100

    Abstract: B270 B280 B290 J-STD-020D case SMB
    Text: B270 - B2100 Green 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection


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    PDF B2100 DS30021 B2100 B270 B280 B290 J-STD-020D case SMB

    Untitled

    Abstract: No abstract text available
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak For Use in Low Voltage, High Frequency Inverters,


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    PDF B2100 J-STD-020C DS30021 B270-B2100

    B2100

    Abstract: B270 B280 B290
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


    Original
    PDF B2100 DS30021 B270-B2100 B2100 B270 B280 B290

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: B270 B280 B290 B2100 B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency


    Original
    PDF B2100 DS30021 B270-B2100

    Untitled

    Abstract: No abstract text available
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B270 B280 B290 B2100 Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency


    Original
    PDF B2100 DS30021 B270-B2100

    Untitled

    Abstract: No abstract text available
    Text: B270 - B2100 Green 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


    Original
    PDF B2100 J-STD-020 DS30021

    B2100

    Abstract: B270 B280 B290
    Text: B270 - B2100 Green 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


    Original
    PDF B2100 J-STD-020 DS30021 B2100 B270 B280 B290

    b2100

    Abstract: B270 B280 B290 J-STD-020D
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency


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    PDF B2100 J-STD-020D DS30021 b2100 B270 B280 B290 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


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    PDF MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MBRS2H100/D

    Untitled

    Abstract: No abstract text available
    Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


    Original
    PDF MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, A210G MBRS2H100/D

    SMA CASE 403D-02 footprint

    Abstract: No abstract text available
    Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with


    Original
    PDF MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MBRS2H100/D SMA CASE 403D-02 footprint

    B210G

    Abstract: Schottky b210
    Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original
    PDF MBRS2H100T3G MBRS2H100/D B210G Schottky b210

    B210G

    Abstract: Schottky b210
    Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original
    PDF MBRS2H100T3G MBRS2H100/D B210G Schottky b210

    MBRS2H100T3G

    Abstract: B210G 403A-03 Schottky b210
    Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


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    PDF MBRS2H100T3G MBRS2H100/D MBRS2H100T3G B210G 403A-03 Schottky b210

    MBRS2H100T3G

    Abstract: mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint
    Text: MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original
    PDF MBRS2H100T3G, MBRA2H100T3G 403Daws MBRS2H100/D MBRS2H100T3G mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint

    B2100

    Abstract: B270 B280 B290
    Text: B270 -B2100 VISHAY 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER LITEM ZI POWER SEMICONDUCTOR y Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


    OCR Scan
    PDF -B2100 MIL-STD-202, 300ns DS30021 B270-B2100 B2100 B270 B280 B290

    Untitled

    Abstract: No abstract text available
    Text: B270- B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak


    OCR Scan
    PDF B2100 DS30021 B270-B2100

    Untitled

    Abstract: No abstract text available
    Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency SMB Dim Surge Overload Rating to 50A Peak


    OCR Scan
    PDF B2100 IL-STD-202, DS30021 B270-B2100

    IC 74187

    Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
    Text: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p


    OCR Scan
    PDF N74S260N 55616D N74S280AN S5617B N74S287N 1024-Bit 55618X N74S288N 256-Bit 55619R IC 74187 lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288