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Advantech Co Ltd AIMB-210G2-S6B1E SBC 1.6GHZ 1 CORE 2GB/0GB RAM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AIMB-210G2-S6B1E	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	AIMB-210G2-S6B1E	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies M55342E02B210GSWI M55342E 25PPM 0505 210 2% S WI - Waffle Pack (Alt: M55342E02B210GSWI)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342E02B210GSWI	Waffle Pack		22 Weeks	25	1 - 10 - 100 $11.9734 1000 $4.0005 10000 $4.0005	Buy Now
Vishay Intertechnologies M55342E02B210GSWP M55342E 25PPM 0505 210 2% S WP - Waffle Pack (Alt: M55342E02B210GSWP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342E02B210GSWP	Waffle Pack		22 Weeks	25	1 - 10 - 100 $11.9734 1000 $4.0005 10000 $4.0005	Buy Now
Kyocera AVX Components 100B210GW500XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B210GW500XC100					1 $6.77 10 $5.87 100 $4.51 1000 $3.83 10000 $3.76	Get Quote
BlockMaster Blocks USL-5HB2-10-G8BR Sb 10P 5.00Mm G8,b, r Rohs Compliant: Yes \|Blockmaster Electronics USL-5HB2-10-G8BR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	USL-5HB2-10-G8BR	Bulk			1	1 $4.18 10 $4.18 100 $4.18 1000 $3.66 10000 $3.18	Buy Now
NAC	USL-5HB2-10-G8BR					1 $3.22 10 $3.22 100 $3.22 1000 $2.986 10000 $2.986	Buy Now

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B210G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MBRS2H100T3G Abstract: mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint Text: MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	PDF	MBRS2H100T3G, MBRA2H100T3G 403Daws MBRS2H100/D MBRS2H100T3G mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint
Untitled Abstract: No abstract text available Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with	Original	PDF	MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MBRS2H100/D
MBRS2H100T3G Abstract: B210G 403A-03 Schottky b210 Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	PDF	MBRS2H100T3G MBRS2H100/D MBRS2H100T3G B210G 403A-03 Schottky b210
SMA CASE 403D-02 footprint Abstract: No abstract text available Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with	Original	PDF	MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, MBRS2H100/D SMA CASE 403D-02 footprint
B210G Abstract: Schottky b210 Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	PDF	MBRS2H100T3G MBRS2H100/D B210G Schottky b210
NBRS2H100T3G Abstract: NBRS2H100 Schottky b210 A210G Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with	Original	PDF	MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, A210G MBRS2H100/D NBRS2H100T3G NBRS2H100 Schottky b210
B210G Abstract: Schottky b210 Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	PDF	MBRS2H100T3G MBRS2H100/D B210G Schottky b210
Untitled Abstract: No abstract text available Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with	Original	PDF	MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, A210G MBRS2H100/D