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Toshiba America Electronic Components S-AU27AM Electronic Component
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SAU27AM Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S-AU27AM		Toshiba	25W FM RF POWER AMPLIFIER MODULE		Original	PDF
S-AU27AM		Toshiba	RF power amplifier module		Original	PDF
S-AU27AM		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
S-AU27AM		Toshiba	25 W FM RF Power Amplifier Module		Scan	PDF
S-AU27AM		Toshiba	RF Amplifier, General purpose amplifier, Single, Module, 490 MHz, 5-53Q, 6-Pin		Scan	PDF

SAU27AM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
S-AU27AH Abstract: SAU27AM S-AU27AL S-AU27AM VCC317 TOSHIBA RF Power Module Text: S−AU27AL,S−AU27AM,S−AU27AH TOSHIBA RF POWER AMPLIFIER MODULE S−AU27AL,S−AU27AM,S−AU27AH 25W FM RF POWER AMPLIFIER MODULE Unit in mm S-AU27AL : f = 400~430MHz S-AU27AM : f = 450~490MHz S-AU27AH : f = 490~512MHz MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC	Original	PDF	S-AU27AL S-AU27AM S-AU27AH S-AU27AL 430MHz S-AU27AM 490MHz S-AU27AH SAU27AM VCC317 TOSHIBA RF Power Module
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
S-AV17 Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079 Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors	Original	PDF	10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
S-AU80 Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors	Original	PDF	10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
PI-600 Abstract: S-AU27AH S-AU27AL S-AU27AM TOSHIBA RF Power Module Text: S−AU27AL,S−AU27AM,S−AU27AH TOSHIBA RF POWER AMPLIFIER MODULE S−AU27AL,S−AU27AM,S−AU27AH 25W FM RF POWER AMPLIFIER MODULE Unit in mm l S-AU27AL : f = 400~430MHz l S-AU27AM : f = 450~490MHz l S-AU27AH : f = 490~512MHz MAXIMUM RATINGS Tc = 25°C	Original	PDF	S-AU27AL S-AU27AM S-AU27AH S-AU27AL 430MHz S-AU27AM 490MHz PI-600 S-AU27AH TOSHIBA RF Power Module
S-AV21H Abstract: S-AV21L S-AU14 S-AV16H S-AV12 S-AU47 S-AU31A Amateur S-AU17A radio Text: R F P o w e r A m p lifie r M o d u le s Type No. ^ Applicaiton Output Power P o W Frequency Range f (MHz) S-AV5 VHF 10W FM amateur radio 15 144-148 S-AV6 VHF 25W FM marina band 26 154-162 S-AV7 VHF 25W FM amateur radio 26 144-148 S-AV8 VHF10W FM/SSB amateur radio	OCR Scan	PDF	S-AV10L S-AV10H S-AV12 S-AV15 S-AV16L S-AV16H S-AV16VH S-AV17 S-AV21L S-AV21H S-AU14 S-AU47 S-AU31A Amateur S-AU17A radio
S-AU27AH Abstract: S-AU27 SAU27AM S-AU27AL S-AU27AM toshiba power module VCC317 Text: TOSHIBA S-AU27AL,S-AU27AM,S-AU27AH TOSHIBA RF POWER AMPLIFIER MODULE S-AU27AL, S-AU27AM, S-AU27AH 25W FM RF POWER AMPLIFIER MODULE • S-AU27AL f = 400~430M H z • S-AU27AM f = 450~490M H z • S-AU27AH f = 490~512M H z U nit in mm 2- R 2 .1 ±0. 2 50 . 5 + 0 . 15	OCR Scan	PDF	S-AU27AL S-AU27AM S-AU27AH S-AU27AL, S-AU27AM, S-AU27AL S-AU27AM 430MHz S-AU27AH S-AU27 SAU27AM toshiba power module VCC317
Untitled Abstract: No abstract text available Text: TOSHIBA S-AU27AL,S-AU27AM,S-AU27AH TOSHIBA RF PO W ER AM PLIFIER MODULE S-AU27AL, S-AU27AM, S-AU27AH Unit in mm 25W FM RF PO W ER AM PLIFIER MODULE • • • S-AU27AL S-AU27AM S-AU27AH f = 400~430MHz f = 450~490MHz f=490~512MHz £ i 2R2 . 1 iO. 2 fi G. 5 + 0 . 15	OCR Scan	PDF	S-AU27AL S-AU27AM S-AU27AH S-AU27AL, S-AU27AM, S-AU27AL S-AU27AM 430MHz
Untitled Abstract: No abstract text available Text: TOSHIBA S-AU27AL/S-AU27AM/S-AU27AH TOSHIBA RF POWER AMPLIFIER MODULE S-AU27AL, S-AU27AM, S-AU27AH 25W FM RF POWER AMPLIFIER MODULE S-AU27AL S-AU27AM S-AU27AH Unit in mm f=400~430MHz f=450~490MHz f=490-512M Hz 3R 2 .1 ± 0 . 2 MAXIMUM RATINGS Tc = 25°C SYMBOL RATING	OCR Scan	PDF	S-AU27AL/S-AU27AM/S-AU27AH S-AU27AL, S-AU27AM, S-AU27AH S-AU27AL S-AU27AM S-AU27AH 430MHz 490MHz 490-512M