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    SATURATED SWITCHES Search Results

    SATURATED SWITCHES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    SATURATED SWITCHES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-Channel JFET

    Abstract: p-channel jfet rf "N-Channel JFET" Amplifiers N-channel JFET HIGH VOLTAGE high current POWER PNP TRANSISTORS JFET
    Text: Section 2 Short Form Specifications NPN High Speed Saturated Switches . 2-3 PNP High Speed Saturated Switches . 2-4


    Original     		PDF

    BSX20

    Abstract: No abstract text available
    Text: BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BSX20 BSX20

    BSX20

    Abstract: BSX19 BSX19-BSX20
    Text: BSX19 BSX20 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BSX19 BSX20 BSX19 BSX20 BSX19-BSX20

    Untitled

    Abstract: No abstract text available
    Text: BFR92P Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFR92P AEC-Q101

    marking p1S

    Abstract: Q62702-F1488 GMA marking
    Text: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF OT-323 Q62702-F1488 900MHz Dec-10-1996 marking p1S Q62702-F1488 GMA marking

    2N2894

    Abstract: No abstract text available
    Text: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N2894 2N2894

    2N3014 speed transistor

    Abstract: 2N3014 2N3014 TO-18
    Text: 2N3014 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3014 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N3014 2N3014 2N3014 speed transistor 2N3014 TO-18

    PW 2N

    Abstract: 2N2894 2n320 2N3209
    Text: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023


    Original     		PDF 2N2894 2N3209 2N2894, 2N3209 PW 2N 2N2894 2n320

    2N834

    Abstract: 2N408 mps834
    Text: Una. *-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2N834-MPS834 NPN HIGH SPEED SATURATED LOGIC SWITCHES DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS PD . 826 mW • TA ' 25°C (MPS834)


    Original     		PDF 2N834-MPS834 MPS834) MP5834I 2N408 MPSL08 O18-1 MPS834 2N834 2N408 mps834

    2n3013

    Abstract: No abstract text available
    Text: 2N3013 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3013 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N3013 2N3013

    2N2907A

    Abstract: 2N2907 2N2905a equivalent 2N2905A 2N2905A THOMSON 2N2906A 15mAIB 2N2907A THOMSON COMPONENTS 2N2907A diagram
    Text: 2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


    Original     		PDF 2N2905A 2N2907A 2N2905A 2N2907A 2N2905A) 2N2907A) 2N2906A 2N2907 2N2905a equivalent 2N2905A THOMSON 15mAIB 2N2907A THOMSON COMPONENTS 2N2907A diagram

    BFR92W

    Abstract: VSO05561 marking p1S
    Text: BFR92W NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR92W VSO05561 OT323 900MHz Aug-03-2001 BFR92W VSO05561 marking p1S

    BFQ71

    Abstract: Q62702-F775 bfq 96
    Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.


    Original     		PDF Q62702-F775 BFQ71 Q62702-F775 bfq 96

    BFR92P

    Abstract: 011v1
    Text: BFR92P NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR92P VPS05161 900MHz Aug-03-2001 BFR92P 011v1

    BCR108W

    Abstract: BFR92W E6327 VSO05561
    Text: BFR92W NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR92W VSO05561 OT323 BCR108W BFR92W E6327 VSO05561

    BC303

    Abstract: BC303-BC304 BC304
    Text: BC303 BC304 MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC303 and BC304 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are intended particularly as audio driver stages in commercial and professionnel equipments. In addition they are useful as high speed saturated switches


    Original     		PDF BC303 BC304 BC304 BC301 BC302. BC303-BC304

    2n3209

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 20 STERN AVE. (212)227-6005 SPRINQRELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case,


    Original     		PDF 2N2894 2N3209 2N2894, 2N3209 100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.


    OCR Scan     		PDF BSX20 BSX20 B5X19

    BSX20

    Abstract: BSX19 saturated switches
    Text: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS


    OCR Scan     		PDF BSX19 BSX20 JedecTO-18 G-1949 6-19S0 G-1946 BSX20 saturated switches

    Untitled

    Abstract: No abstract text available
    Text: FI 3QE ì> m 7121237 QQ31D37 1 • '"P3S-I3' SGS-THOMSON BSX19 BSX20 S 6 S-TH0MS0N HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated


    OCR Scan     		PDF QQ31D37 BSX19 BSX20 BSX19 BSX20 71S1237 031DMQ

    BSX19

    Abstract: BSX20 1s48 bsx 20 G-1945
    Text: BSX19 BSX 20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES T he BSX 19 and BSX 20 are silic o n p la n a r e p ita x ia l NPN tran sisto rs in J e d e c T O -1 8 m etal case. T h e y are p rim a rily in te n de d fo r very high speed saturated s w itc h in g a p p lica tio n s.


    OCR Scan     		PDF BSX19 JedecTO-18 BSX20 100mA G-1945 BSX19 BSX20 1s48 bsx 20 G-1945

    E 94733

    Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1488 OT-323 900MHz E 94733 p1S SOT-89 BFr pnp transistor SPICE 2G6

    Transistor BFR

    Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
    Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code


    OCR Scan     		PDF OT-23 Transistor BFR Transistor BFR 191 Transistor BFR 39 BFR 67

    5N521

    Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
    Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.


    OCR Scan     		PDF BFQ71 Q62702-F775 0235bG5 DGb713S 5N521 VCE05181 bfq 85 siemens Pm 90 87 transistor zo 103 MA 7S 714