Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N3209 Search Results

    SF Impression Pixel

    2N3209 Price and Stock

    New Jersey Semiconductor Products, Inc. 2N3209

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3209 4,576 3
    • 1 -
    • 10 $1.8
    • 100 $1.5
    • 1000 $0.792
    • 10000 $0.792
    		Buy Now

    New Jersey Semiconductor Products Inc 2N3209

    TRANSISTOR,BJT,PNP,20V V(BR)CEO,200MA I(C),TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3209 3,660
    • 1 $3.2
    • 10 $3.2
    • 100 $3.2
    • 1000 $1
    • 10000 $0.88
    		Buy Now

    SGS Thomson 2N3209

    TRANSISTOR,BJT,PNP,20V V(BR)CEO,200MA I(C),TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3209 320
    • 1 $2.5
    • 10 $2.5
    • 100 $1.25
    • 1000 $1
    • 10000 $1
    		Buy Now

    STMicroelectronics 2N3209

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2N3209 3,516
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Raytheon 2N3209

    RA 2N3209
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ES Components 2N3209 323
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2N3209 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3209 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO18 / Vceo=20 / Ic=0.2 / Hfe=30-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
    2N3209 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=20 / Ic=0.2 / Hfe=30-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
    2N3209 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N3209 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3209 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N3209 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3209 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N3209 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    2N3209 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3209 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3209 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3209 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3209 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3209 Unknown Vintage Transistor Datasheets Scan PDF
    2N3209 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3209 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3209 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3209 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3209 Unknown GE Transistor Specifications Scan PDF
    2N3209 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N3209 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N3209CSM LAB HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR


    Original     		PDF 2N3209CSM 2N3209CSM-JQR" 2N3209CSM-JQR-B 5/30m 400MHz

    2SA1402E

    Abstract: 2SC2224 2SA1371E
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425


    Original     		PDF 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 2SA1404D 2SA1402E 2SC2224 2SA1371E

    PW 2N

    Abstract: 2N2894 2n320 2N3209
    Text: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023


    Original     		PDF 2N2894 2N3209 2N2894, 2N3209 PW 2N 2N2894 2n320

    2N3209CSM

    Abstract: No abstract text available
    Text: SEME 2N3209CSM LAB HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR


    Original     		PDF 2N3209CSM 100MHz 2N3209CSM

    Untitled

    Abstract: No abstract text available
    Text: 2N3209XCSM MECHANICAL DATA HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N3209XCSM 100MHz DOC7530

    Untitled

    Abstract: No abstract text available
    Text: 2N3209X MECHANICAL DATA HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES


    Original     		PDF 2N3209X O-206AA) 100MHz DOC7502

    2N3209

    Abstract: 400M
    Text: 2N3209 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF 2N3209 O206AA) 5/30m 2-Aug-02 2N3209 400M

    2n3209

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 20 STERN AVE. (212)227-6005 SPRINQRELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case,


    Original     		PDF 2N2894 2N3209 2N2894, 2N3209 100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: 2N3209 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF 2N3209 O206AA) 5/30m 19-Jun-02

    2N3209

    Abstract: No abstract text available
    Text: 2N3209 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF 2N3209 O206AA) 5/30m 16-Jul-02 2N3209

    Untitled

    Abstract: No abstract text available
    Text: 2N3209X MECHANICAL DATA HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES


    Original     		PDF 2N3209X O-206AA) 100MHz 3002s, DOC7502

    2N3209DCSM

    Abstract: No abstract text available
    Text: SEME 2N3209DCSM LAB DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 1.27 ± 0.13


    Original     		PDF 2N3209DCSM 100MHz 2N3209DCSM

    Untitled

    Abstract: No abstract text available
    Text: 2N3209 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)80nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3209

    Untitled

    Abstract: No abstract text available
    Text: 2N3209XCSM MECHANICAL DATA HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004)


    Original     		PDF 2N3209XCSM 100MHz 3003s, DOC7530

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2n2894

    Abstract: 3209
    Text: SGS-THOMSON Rfl0» [iyiM !0 gi 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitax­ ial PNP transistors in JedecTO-18 metal case, in­ tended for high speed, low saturation switching ap­ plications up to 100 mA.


    OCR Scan     		PDF 2N2894, 2N3209 JedecTO-18 2N2894 2N3209 3209

    Untitled

    Abstract: No abstract text available
    Text: mi IFF! mi SEME 2N3209CSM LAB HIGH SPEED, PNR SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 * 0.004) • SILICON PLANAR EPITAXIAL PNP


    OCR Scan     		PDF 2N3209CSM 100MHz

    Untitled

    Abstract: No abstract text available
    Text: INI INI S E M E 2N3209CSM LAB HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 ± 0 .0 0 4 ) (0 .0 1 2 ) • SILICON PLANAR EPITAXIAL PNP TRAN­


    OCR Scan     		PDF 2N3209CSM 100MHz

    2N2894

    Abstract: No abstract text available
    Text: 30E ]> n T'ìs'ìea? e m a n a i b m , 2N2894 2N3209 f Z 7 SGS-THOMSON ^ 7 # M O M iy iû ï^ M O Û S S G S - TH O M S ON HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case,


    OCR Scan     		PDF 2N2894 2N3209 2N2894, 2N3209 2N2894-2N3209 2N2894

    Untitled

    Abstract: No abstract text available
    Text: Illl = ^ i Illl 2N3209CSM SEME LAB HIGH SPEED, PNR SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ±0.10 t (0.02 ± 0.004) H 0.31 (0.012)


    OCR Scan     		PDF 2N3209CSM 100MHz 0001ST0

    2N2894

    Abstract: 2N3209 g3105
    Text: 3DE j> b 53 ? QG3i i 3^ b m 7^ . / = 7 S G S -T H 0 M S 0 N ^7#JD i@iLi01T^ 2 [M]a(gi 2N2894 2N3209 s G S-THOMSON HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case, Intended for high speed, low saturation switching


    OCR Scan     		PDF 2N2894 2N3209 2N2894, 2N3209 G-3105 2N2894-2N3209 D031142 S-4621 g3105

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    NS3762

    Abstract: PN4258
    Text: {DISCRETE} £> 3 2 CM CO CM CM in to ICO 100 100 90 co o CO 20 20 10 o o o § 300 250 0 ID CO CO CO 25 o 30 o o CO > o o • »J o c 1- 40Ö , o o s t i l l 0 ■> U3 c ▼* <0 (£> - 5 O S- O C PJ ! S CO 3 0 c T- O * if > in CM 0 I o r - Ci o c 00 r- id


    OCR Scan     		PDF

    2N5057

    Abstract: JAN2N706A 2n5456
    Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A


    OCR Scan     		PDF 2N834 2N709 FT709 2N3010 2N709A 2N2475 2N3647 2N3510 2N3011 2N743 2N5057 JAN2N706A 2n5456