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    SA154 Search Results

    SA154 Result Highlights (3)

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    2SA1544-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SA1544-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1546-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    SA154 Price and Stock

    Kyocera AVX Components TPSA154K050R9000

    CAP TANT 0.15UF 10% 50V 1206
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    DigiKey TPSA154K050R9000 Cut Tape 2,870 1
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    TPSA154K050R9000 Digi-Reel 2,870 1
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    C&K TMCGD6SA1540C

    SWITCH SNAP ACTION SPDT 10A 125V
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    DigiKey TMCGD6SA1540C Bulk 531 1
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    Mouser Electronics TMCGD6SA1540C 26
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    C&K TMCGF5SA1540C

    SWITCH SNAP ACTION SPDT 1A 125V
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    STMicroelectronics STEVAL-ISA154V1

    EVAL BOARD FOR L5980
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    DigiKey STEVAL-ISA154V1 Box 1 1
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    Mouser Electronics STEVAL-ISA154V1 5
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    Diotec Semiconductor AG SA154

    DIODE GEN PURP 50V 1A MELF
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    Master Electronics SA154
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    SA154 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA154 Diotec Fast Switching Surface Mount Si-Rectifier Original PDF
    SA154 Semikron Fast silicon rectifier diodes Original PDF
    SA154 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SA154 Sino-American Silicon Products General Purpose Silicon Rectifier, DO-15 Scan PDF
    SA154G Sino-American Silicon Products 1.5A Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF

    SA154 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA158

    Abstract: No abstract text available
    Text: SA154 . SA160 SA154 . SA160 Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizuim-Gleichrichterdioden für die Oberflächenmontage Version 2012-04-02 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung


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    PDF SA154 SA160 UL94V-0 DO-213AB SA154 SA155 SA156 SA157 SA158

    SA158

    Abstract: SA154 DO-213AB SA155 SA156 SA157 SA159 SA160
    Text: SA154 . SA160 SA154 . SA160 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-21 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V


    Original
    PDF SA154 SA160 DO-213AB UL94V-0 SA158 SA154 DO-213AB SA155 SA156 SA157 SA159 SA160

    Untitled

    Abstract: No abstract text available
    Text: SA154SA160 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2004-10-01 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V 0.5 Plastic case MELF


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    PDF SA154 SA160 DO-213AB UL94V-0 SA155 SA156 SA157

    SA158

    Abstract: DO-213AB SA154 SA155 SA156 SA157 SA159 SA160
    Text: SA154 . SA160 SA154 . SA160 Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizuim-Gleichrichterdioden für die Oberflächenmontage Version 2005-06-21 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung


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    PDF SA154 SA160 DO-213AB UL94V-0 pea40 SA158 DO-213AB SA154 SA155 SA156 SA157 SA159 SA160

    Untitled

    Abstract: No abstract text available
    Text: SA154 . SA160 SA154 . SA160 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-21 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V


    Original
    PDF SA154 SA160 DO-213AB UL94V-0

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    PDF Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original
    PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


    Original
    PDF W78M32V-XBX 8Mx32 120ns 13x22mm

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL

    10001000XXX

    Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
    Text: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing


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    PDF W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original
    PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


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    PDF MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212

    10001XXXXX

    Abstract: No abstract text available
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29PL-J 16-Bit) S29PL-J 10001XXXXX

    SSD1353

    Abstract: SSD1353U4 ROW130 Solomon Systech ssd1353 SA 9259 SB148 SB145 SSD1353U4R1 SB143 SC141
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1353 Advance Information 160RGB x 132 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change


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    PDF SSD1353 160RGB SSD1353 SSD1353U4 ROW130 Solomon Systech ssd1353 SA 9259 SB148 SB145 SSD1353U4R1 SB143 SC141

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


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    PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


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    PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    Untitled

    Abstract: No abstract text available
    Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V


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    PDF S71WSxxxJ 16-bit) 66MHz S71WS S71WS256/128/064J

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024