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    S1413 Search Results

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    S1413 Price and Stock

    Diodes Incorporated LM2902S14-13

    IC OPAMP GP 4 CIRCUIT 14SO
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    DigiKey LM2902S14-13 Cut Tape 4,990 1
    • 1 $0.69
    • 10 $0.413
    • 100 $0.2578
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    LM2902S14-13 Digi-Reel 4,990 1
    • 1 $0.69
    • 10 $0.413
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    LM2902S14-13 Reel 2,500 2,500
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    Avnet Silica LM2902S14-13 2,500 10 Weeks 2,500
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    New Advantage Corporation LM2902S14-13 2,500 1
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    Diodes Incorporated 74LV05AS14-13

    IC INVERTER 6CH 1-INP 14SO
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    DigiKey 74LV05AS14-13 Cut Tape 4,835 1
    • 1 $0.55
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    74LV05AS14-13 Digi-Reel 4,835 1
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    Bristol Electronics 74LV05AS14-13 4,627
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    TME 74LV05AS14-13 5
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    Avnet Silica 74LV05AS14-13 2,500 10 Weeks 2,500
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    New Advantage Corporation 74LV05AS14-13 2,500 1
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    Diodes Incorporated 74LV32AS14-13

    IC GATE OR 4CH 2-INP 14SO
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    DigiKey 74LV32AS14-13 Digi-Reel 4,487 1
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    74LV32AS14-13 Cut Tape 4,487 1
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    74LV32AS14-13 Reel 2,500 2,500
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    Bristol Electronics 74LV32AS14-13 4,053
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    Diodes Incorporated 74HC164S14-13

    IC 8BIT SERIAL SHIFT REG 14-SOIC
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    DigiKey 74HC164S14-13 Digi-Reel 2,490 1
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    74HC164S14-13 Cut Tape 2,490 1
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    74HC164S14-13 Cut Tape 1,275 1
    • 1 $0.47
    • 10 $0.382
    • 100 $0.2599
    • 1000 $0.14617
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    Diodes Incorporated 74AHC04S14-13

    IC INVERTER 6CH 1-INP 14SO
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    DigiKey 74AHC04S14-13 Cut Tape 2,300 1
    • 1 $0.39
    • 10 $0.319
    • 100 $0.2175
    • 1000 $0.12235
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    Avnet Silica 74AHC04S14-13 2,500 10 Weeks 2,500
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    S1413 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FR4 Prepreg

    Abstract: FR4 Prepreg for RF 06 layer PCB S2254 S2528
    Text: DATA SHEET SKY67002-396LF: 1.6-2.1 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure • Ultra low-noise systems • Balanced, single-ended low-noise amplifier designs RF_IN Features VBIAS


    Original     		PDF SKY67002-396LF: J-STD-020) 201442B FR4 Prepreg FR4 Prepreg for RF 06 layer PCB S2254 S2528

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C


    Original     		PDF SKY67153-396LF: S3502 SKY67153-396LF 202887D

    RRUS 32

    Abstract: No abstract text available
    Text: DATA SHEET SKY67151-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C


    Original     		PDF SKY67151-396LF: S2241a SKY67151-396LF 202390E RRUS 32

    S1495

    Abstract: rf amplifier 10 ghz s1498 S1490 SKY65047 S1487 S1489 s1493
    Text: PRELIMINARY DATA SHEET SKY65047-360LF: 0.4-3.0 GHz Low Noise Amplifier Applications Description • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • Satellite receivers • Paging • Remote metering • WLL and ISM receivers


    Original     		PDF SKY65047-360LF: SKY65047-360LF 01084A S1495 rf amplifier 10 ghz s1498 S1490 SKY65047 S1487 S1489 s1493

    Untitled

    Abstract: No abstract text available
    Text: SiHU3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original     		PDF SiHU3N50DA O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65048-360LF: 0.7-1.2 GHz Low Noise Amplifier Applications InterStage Match x Wireless infrastructure: GSM, CDMA, WCDMA, ISM, and TD-SCDMA x Ultra-low noise applications Figure 1. SKY65048-360LF Block Diagram Features x Ultra-low Noise Figure = 0.65 dB @ 900 MHz


    Original     		PDF SKY65048-360LF: SKY65048-360LF J-STD-020) 201101C

    Si2338DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2338DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2338DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF SiR804DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2303CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2303CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2343CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2343CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    NF 848

    Abstract: No abstract text available
    Text: DATA SHEET SKY67101-396LF: 0.4 to 1.2 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, and TD-SCDMA cellular infrastructure  Ultra low-noise systems RF_OUT/VDD RF_IN FEEDBACK Features Active Bias RFGND  Ultra-low-noise figure: 0.57 dB @ 0.9 GHz


    Original     		PDF SKY67101-396LF: J-STD-020) S1942 SKY67101-396LF 201266I NF 848

    S1495

    Abstract: rf amplifier 10 ghz s1498 NFC81 s1493 S1498 2450 MHz low noise amplifier schematic S1487 S1489 S1490 S1488
    Text: DATA SHEET SKY65047-360LF: 0.4-3.0 GHz Low-Noise Amplifier Applications Description • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  Satellite receivers  Paging  Remote metering  WLL and ISM receivers


    Original     		PDF SKY65047-360LF: SKY65047-360LF 201084C S1495 rf amplifier 10 ghz s1498 NFC81 s1493 S1498 2450 MHz low noise amplifier schematic S1487 S1489 S1490 S1488

    murata REEL label

    Abstract: MXA agilent s1413 amplifier diagram N4001A N9020A S1500 S1577 VT47 S14-1
    Text: DATA SHEET SKY65084-360LF: 1.5-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA  Ultra low-noise applications Features Figure 1. SKY65084-360LF Block Diagram  Ultra-low Noise Figure = 0.70 dB @ 1.95 GHz


    Original     		PDF SKY65084-360LF: SKY65084-360LF J-STD-020) 201107E murata REEL label MXA agilent s1413 amplifier diagram N4001A N9020A S1500 S1577 VT47 S14-1

    S1513

    Abstract: VT-47
    Text: DATA SHEET SKY65066-360LF: 2.3-2.7 GHz Low Noise Amplifier Applications InterStage Match x Wireless infrastructure: WLAN, Bluetooth, WiMAX, LTE, and WCDMA x Ultra-low noise applications Figure 1. SKY65066-360LF Block Diagram Features x Ultra-low Noise Figure = 0.70 dB @ 2.5 GHz


    Original     		PDF SKY65066-360LF: SKY65066-360LF J-STD-020) 201090C S1513 VT-47

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65037-360LF: 0.7-1.2 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, ISM, and TD-SCDMA • Ultra-low noise applications Figure 1. SKY65037-360LF Block Diagram Features • Ultra-low Noise Figure = 0.60 dB @ 850 MHz


    Original     		PDF SKY65037-360LF: SKY65037-360LF J-STD-020) 201046B

    Murata GRM1555c

    Abstract: S1513 Murata GJM1555c
    Text: DATA SHEET SKY65049-360LF: 1.7-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA • Ultra-low noise applications Features Figure 1. SKY65049-360LF Block Diagram • Ultra-low Noise Figure = 0.7 dB @ 2.0 GHz


    Original     		PDF SKY65049-360LF: J-STD-020) SKY65049-360LF 01118A Murata GRM1555c S1513 Murata GJM1555c

    Untitled

    Abstract: No abstract text available
    Text: Si7236DP www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.0052 at VGS = 4.5 V 60 0.0070 at VGS = 2.5 V 60 VDS (V) 20 Qg (nC) TYP. 31 D2 5 D1 D1 8 7 6. 15 m m 1 5 5.1 mm Top View • Material categorization:


    Original     		PDF Si7236DP Si7236DP-T1-E3 Si7236DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original     		PDF SiHD3N50DA O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C


    Original     		PDF SKY67153-396LF: S3502 SKY67153-396LF 202887C

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA431DJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF SiA431DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2305CDS www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF Si2305CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2319CDS www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2319CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Part Number To Factory Code Cross Reference Cross Reference Guide P art Nu n b a r Facto ry Cada Page P art Num ber Facto ry Carla Paga P art Number Factory Coda Paga P art Number Factory Coda 4-40-UN C 2 A X 3 /4 4 6 2 12 2 2 0 7 5 5 4 2 35 57-2 0 3 6 0 -1 0


    OCR Scan     		PDF 4-40-UN 97-DS S64-13 97-CP-64 97-FR 50P-100 97-CP-64T 97-FH5DP-220 97-CS-14 97-FRS0P-470

    aeg aas

    Abstract: No abstract text available
    Text: CMOS M IT E L MT9315 Acoustic Echo Canceller Advance Information SEMICONDUCTOR DS5038 Features ISSUE 3 February 1999 O rdering In fo rm a tio n Contains two echo cancellers: 112ms acoustic echo canceller + 16ms line echo canceller MT9315AP MT9315AE Works with low cost voice codec. ITU-T G.711


    OCR Scan     		PDF MT9315 DS5038 112ms aeg aas