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    RJP30H1DPP Search Results

    RJP30H1DPP Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJP30H1DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    RJP30H1DPP Price and Stock

    Rochester Electronics LLC RJP30H1DPP-MZ-T2

    IGBT
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    DigiKey RJP30H1DPP-MZ-T2 Bulk 163
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    Rochester Electronics LLC RJP30H1DPP-M9-T2

    IGBT
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    DigiKey RJP30H1DPP-M9-T2 Bulk 163
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    Rochester Electronics LLC RJP30H1DPP-M1-T2

    IGBT
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    DigiKey RJP30H1DPP-M1-T2 Bulk 163
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    Renesas Electronics Corporation RJP30H1DPP-M1#T2

    RJP30H1DPP-M1#T2
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    Verical RJP30H1DPP-M1#T2 9,068 180
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    Rochester Electronics RJP30H1DPP-M1#T2 9,068 1
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    Renesas Electronics Corporation RJP30H1DPP-M9#T2

    RJP30H1DPP-M9#T2
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    Verical RJP30H1DPP-M9#T2 5,816 180
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    RJP30H1DPP-M9#T2 242 180
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    Rochester Electronics RJP30H1DPP-M9#T2 6,058 1
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    RJP30H1DPP Datasheets Context Search

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    PRSS0003AF-A

    Abstract: RJP30H1 rjp30H
    Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original
    PDF RJP30H1DPP-M0 R07DS0466EJ0200 O-220FL PRSS0003AF-A) O-220FL) PRSS0003AF-A RJP30H1 rjp30H

    rjp30h1

    Abstract: rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30
    Text: Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original
    PDF RJP30H1DPP-M0 O-220FL R07DS0466EJ0200 PRSS0003AF-A) O-220FL) rjp30h1 rjp30H RJP30H1DPP RJP30H1DPP-M0 rjp30