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    RJK6002DPD Search Results

    RJK6002DPD Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6002DPD-00#J2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 2A 6800Mohm Mp-3A/To-252 Visit Renesas Electronics Corporation
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    RJK6002DPD Price and Stock

    Renesas Electronics Corporation RJK6002DPD-WS-J2

    MOSFET N-CH 600V 2A MP3A
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    Renesas Electronics Corporation RJK6002DPD-00-J2

    MOSFET N-CH 600V 2A MP3A
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    RJK6002DPD Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK6002DPD Renesas Technology MOSFET, Switching; VDSS (V): 600; ID (A): 2; Pch : -; RDS (ON) typ. (ohm) @10V: 5.7; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 165; toff ( us) typ: -; Package: MP-3A Original PDF
    RJK6002DPD Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6002DPD-00#J2 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2A MP3A Original PDF
    RJK6002DPD-00-J2 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    RJK6002DPD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PRSS0004ZA-A

    Abstract: RJK6002DPD-00-J2 RJK6002DPD
    Text: RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A Package name : MP-3A 2, 4 4 1.


    Original     		PDF RJK6002DPD REJ03G1483-0100 PRSS0004ZA-A PRSS0004ZA-A RJK6002DPD-00-J2 RJK6002DPD

    RJK6002DPD

    Abstract: No abstract text available
    Text: RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0200 Rev.2.00 Dec 19, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A Package name : MP-3A 2, 4 4 1.


    Original     		PDF RJK6002DPD REJ03G1483-0200 PRSS0004ZG-A RJK6002DPD

    RJK6002DPD

    Abstract: PRSS0004ZG-A RJK6002DPD-00-J2
    Text: RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0200 Rev.2.00 Dec 19, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A Package name : MP-3A 2, 4 4 1.


    Original     		PDF RJK6002DPD REJ03G1483-0200 PRSS0004ZG-A RJK6002DPD PRSS0004ZG-A RJK6002DPD-00-J2

    RJK6002DPD

    Abstract: No abstract text available
    Text: RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0200 Rev.2.00 Dec 19, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A Package name : MP-3A 2, 4 4 1.


    Original     		PDF RJK6002DPD REJ03G1483-0200 PRSS0004ZG-A RJK6002DPD

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    R2A20134

    Abstract: RKS160AKU diode 1n4007 toshiba triac BT 130 grm188b31h104k EKY-500ELL101MHB5D EE16c SR732ATTDR GRM188B31H473K R2A20134SP
    Text: APPLICATION NOTE R2A20134SP R03AN0004EJ0100 Rev.1.00 Sep 16, 2011 Application Note 1. General Description R2A20134SP is a control IC for LED lighting. It has two operation modes, Critical Conduction mode CRM and fixed switching frequency mode. User can choose one suitable mode for their purpose.


    Original     		PDF R2A20134SP R03AN0004EJ0100 R2A20134SP R2A20134 RKS160AKU diode 1n4007 toshiba triac BT 130 grm188b31h104k EKY-500ELL101MHB5D EE16c SR732ATTDR GRM188B31H473K

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    PRSS0004ZG-A

    Abstract: RJK6002DPD RJK6002DPD-00-J2
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF