Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJH60F6 Search Results

    RJH60F6 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJH60F6DPK-00#T0 Renesas Electronics Corporation IGBT for IH, TO-3P, / Visit Renesas Electronics Corporation
    RJH60F6DPQ-A0#T0 Renesas Electronics Corporation IGBT for IH, TO-247A, /Tube Visit Renesas Electronics Corporation
    RJH60F6BDPQ-A0#T0 Renesas Electronics Corporation IGBT for IH, TO-247A, /Tube Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJH60F6 Price and Stock

    Renesas Electronics Corporation RJH60F6DPK-00-T0

    IGBT TRENCH 600V 85A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F6DPK-00-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F6DPQ-A0-T0

    IGBT 600V 85A 297.6W TO247A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F6DPQ-A0-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F6BDPQ-A0-T0

    IGBT 600V 85A 297.6W TO-247A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F6BDPQ-A0-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    RJH60F6 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60F6BDPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 85A 297.6W TO-247A Original PDF
    RJH60F6DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 85A 297.6W TO-3P Original PDF
    RJH60F6DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 85A 297.6W TO247A Original PDF

    RJH60F6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A to9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching R07DS0327EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F6DPQ-A0 R07DS0327EJ0200 PRSS0003ZH-A O-247A)

    rjh60f6

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A) rjh60f6

    rjh60f6

    Abstract: RJH60F6DPK RJH60F RJH60F6DPK-00-T0 RJH60 PRSS0004ZE-A SC-65 RJH60F6DPK-00
    Text: Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F6DPK REJ03G1940-0100 PRSS0004ZE-A rjh60f6 RJH60F6DPK RJH60F RJH60F6DPK-00-T0 RJH60 PRSS0004ZE-A SC-65 RJH60F6DPK-00

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0327EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		PDF RJH60F6DPQ-A0 R07DS0327EJ0100 PRSS0003ZH-A O-247A)

    RJH60F6

    Abstract: RJH60F6DPQ-A0 RJH60F6DPQ PRSS0003ZH-A RJH60F
    Text: Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching R07DS0327EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F6DPQ-A0 R07DS0327EJ0200 PRSS0003ZH-A O-247A) RJH60F6 RJH60F6DPQ-A0 RJH60F6DPQ PRSS0003ZH-A RJH60F

    RJH60F6DPK

    Abstract: RJH60F6
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A RJH60F6DPK RJH60F6

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		PDF RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF