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RG5V02 Abstract: fm25v02 Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	PDF	FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 fm25v02
FM25V02 Abstract: No abstract text available Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	PDF	FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR FM25V02
RG5V02 Abstract: FM25V02 FM25V02-GTR FM25V02-G fm25v02gtr Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	PDF	FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 FM25V02 fm25v02gtr
FM25V02-G Abstract: FM25V02-GTR FM25V02 RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	PDF	FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-G FM25V02-GTR RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr
RG5V02 Abstract: RG5VN02 Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	PDF	FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG RG5V02 RG5VN02
FM25V02-DG Abstract: No abstract text available Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI	Original	PDF	FM25V02 256Kb FM25V02-DG
RG5V02 Abstract: FM25V02-G FM25V02 FM25V02-DG RG5VN02 fm25v02gtr FM25V02G C2H marking C3H marking Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI	Original	PDF	FM25V02 256Kb FM25VN02) RG5V02 FM25V02-G FM25V02 FM25V02-DG RG5VN02 fm25v02gtr FM25V02G C2H marking C3H marking