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    RG2006 Search Results

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    RG2006 Price and Stock

    Rochester Electronics LLC RG2006JN

    RECTIFIER DIODE
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    DigiKey RG2006JN Bulk 1,110
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    Omega Engineering PRG200-60

    PRECISION AIR PRESSURE REGULATOR
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    DigiKey PRG200-60 Bulk 1
    • 1 $226.17
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    Avnet Americas PRG200-60 Bulk 1
    • 1 $181.2997
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    Newark PRG200-60 Bulk 1
    • 1 $181.3
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    Aptina Imaging RG2006JN

    RG2006JN
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    Verical RG2006JN 15,359 1,358
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    onsemi RG2006JN

    Rectifier Diode, 20A, 600V, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RG2006JN 15,359 1
    • 1 $0.26
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    RG2006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rg2006

    Abstract: A1847 ENA1847 RG2006JS-SB
    Text: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications


    Original
    PDF ENA1847 RG2006JS-SB O-220ML SC-67, OT-186use. A1847-3/3 rg2006 A1847 ENA1847 RG2006JS-SB

    RG2006

    Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
    Text: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    PDF RG2006JN ENA1784 PW100s, cycle50% A1784-3/3 RG2006 RG2006n RG2006JN to220ml ENA1784 A1784

    RG2006

    Abstract: RG2006ln A1434-1
    Text: RG2006LN 注文コード No. N A 1 4 3 4 A 三洋半導体データシート 半導体データシート No.NA1434 をさしかえてください。 RG2006LN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・高耐圧である VRRM=600V 。


    Original
    PDF RG2006LN NA1434 IT13677 IT14499 IT14498 IT13678 A1434-2/3 A1434-3/3 RG2006 RG2006ln A1434-1

    RG2006

    Abstract: A1434-1 TC-00002137 ENA1434A
    Text: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.


    Original
    PDF RG2006LN ENA1434A PW100s, cycle50% A1434-3/3 RG2006 A1434-1 TC-00002137 ENA1434A

    RG2006

    Abstract: ENA1434 A1434-1 VRRM600V
    Text: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.


    Original
    PDF RG2006LN ENA1434 A1434-3/3 RG2006 ENA1434 A1434-1 VRRM600V

    RG2006

    Abstract: RG2006n RG2006JN A1784 TO-220ML VRRM600V
    Text: RG2006JN 注文コード No. N A 1 7 8 4 三洋半導体データシート N RG2006JN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・VRRM=600V ・trr=16ns typ. ・逆回復時のノイズが小さい 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original
    PDF RG2006JN O-220ML SC-67, OT186A RG2006 63010SA IT13677 IT14499 RG2006 RG2006n RG2006JN A1784 TO-220ML VRRM600V