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Ohmite Mfg Co HS25E310RFM145 25 WATTS AL HOUSED 10 OHMS 1% E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HS25E310RFM145	Bulk	500		1	1 $12.94 10 $7.997 100 $5.7475 1000 $5 10000 $5	Buy Now
Richardson RFPD	HS25E310RFM145				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HS25E310RFM145					1 - 10 - 100 $6.99 1000 $6.85 10000 $6.85	Buy Now
Ohmite Mfg Co HS50E350RFM145 50 WATTS AL HOUSED 50 OHM 1% E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HS50E350RFM145	Bulk	120		1	1 $10.65 10 $6.59 100 $5.25 1000 $5.25 10000 $5.25	Buy Now
Richardson RFPD	HS50E350RFM145				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HS50E350RFM145					1 - 10 $9.04 100 $7.83 1000 $6.99 10000 $6.89	Buy Now
Ohmite Mfg Co HS50E31RFM145 50 WATTS AL HOUSED 1 OHM 1% E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HS50E31RFM145	Bulk	105		1	1 $13.63 10 $8.433 100 $6.06983 1000 $5.33748 10000 $5.33748	Buy Now
Richardson RFPD	HS50E31RFM145				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HS50E31RFM145					1 - 10 $9.19 100 $7.95 1000 $7.1 10000 $7	Buy Now
Ohmite Mfg Co HS100E61RFM193 RES CHAS MNT 1 OHMS 1% 100W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HS100E61RFM193	Box	51		1	1 $19.2 10 $12.012 100 $8.2375 1000 $8.2375 10000 $8.2375	Buy Now
Richardson RFPD	HS100E61RFM193				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HS100E61RFM193					1 - 10 - 100 $9.84 1000 $8.79 10000 $8.65	Buy Now
Ohmite Mfg Co HS100E622RFM193 RES CHAS MNT 22 OHMS 1% 100W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HS100E622RFM193	Box	32		1	1 $17.58 10 $17.58 100 $7.87344 1000 $7.4625 10000 $7.4625	Buy Now
Richardson RFPD	HS100E622RFM193				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HS100E622RFM193					1 - 10 - 100 $8.91 1000 $7.96 10000 $7.84	Buy Now

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RFM1 Datasheets (144)

Part	Manufacturer	Description	Datasheet Type	PDF
RFM10N12	Intersil	10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2	Original	PDF
RFM10N12	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 10A.	Scan	PDF
RFM10N12	General Electric	(RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS	Scan	PDF
RFM10N12	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
RFM10N12	International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel	Scan	PDF
RFM10N12	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFM10N12	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
RFM10N12	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
RFM10N12L	General Electric	N-channel logic level power field-effect transistor (LL FET). 120V, 10A.	Scan	PDF
RFM10N12L	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
RFM10N12L	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFM10N15	Intersil	10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2	Original	PDF
RFM10N15	General Electric	(RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS	Scan	PDF
RFM10N15	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A.	Scan	PDF

RFM10N15	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
RFM10N15	International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel	Scan	PDF
RFM10N15	Intersil	Obsolete Product Datasheet	Scan	PDF
RFM10N15	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFM10N15	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
RFM10N15L	General Electric	N-channel logic level power field-effect transistor (LL FET). 150V, 10A.	Scan	PDF

...

RFM1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
dv4 mosfets Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254 Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its	Original	PDF	AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036
Untitled Abstract: No abstract text available Text: RFM110W/RFM117W Features Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable Frequency Range: y 240 to 480 MHz RFM110W y 240 to 960 MHz (RFM117W) OOK Modulation Symbol Rate: 0.5 to 30 ksps Output Power: -10 to +13 dBm	Original	PDF	RFM110W/RFM117W RFM110W) RFM117W) RFM110W/RFM117W
Untitled Abstract: No abstract text available Text: RFM12B RFM12B Universal ISM Band FSK Transceiver RFM12B DESCRIPTION Hoperf’ RFM12B is a single chip, low power, multi-channel FSK transceiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 433, 868 and 915 MHz bands.	Original	PDF	RFM12BÂ RFM12B RFM12B
tx rx module 315mhz Abstract: tx rx 315mhz RFM12 RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200 Text: RFM12 Demo RFM12 Demo Kit User Manual HOPE MICROELECTRONICS CO.,LTD Rm B.8/F LiJingGe Emperor Regency 6012 ShenNan Rd., Shenzhen,China Tel: 86-755-82973805 Fax: 86-755-82973550 Email: [email protected] [email protected] Website: http://www.hoperf.com http://hoperf.en.alibaba.com	Original	PDF	RFM12 RFM12 tx rx module 315mhz tx rx 315mhz RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200
433mhz rx tx module Abstract: RFM12B-433S2P RFM12B-433S1P RFM12B RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1 Text: RFM12B Datasheet REV2.0 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12B （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B data sheets） RFM12B	Original	PDF	RFM12B RF12B RFM12B 433/868/915MHZ 433mhz rx tx module RFM12B-433S2P RFM12B-433S1P RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1
GSM repeater ic Abstract: DP-36 IMT-2000 cdma repeater circuit Text: Power Amplifier RFM1855-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost	Original	PDF	RFM1855-10 DP-36 IMT-2000, GSM repeater ic DP-36 IMT-2000 cdma repeater circuit
RFM12-433-D Abstract: tx rx module 315mhz RFM12 CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ Text: RFM12 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12 （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12 data sheets） RFM12 General Introduction	Original	PDF	RFM12 RFM12 315/433/868/915MHZ RFM12-433-D tx rx module 315mhz CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ
rfm110 Abstract: No abstract text available Text: RFM113W Features Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable Frequency Range: 240 to 480 MHz OOK, FSK and GFSK Modulation Symbol Rate: y 0.5 to 30 ksps OOK y 0.5 to 100 ksps (FSK) Deviation: 1.0 to 200 kHz	Original	PDF	RFM113W RFM113W rfm110
RFM10N50 Abstract: AN7254 AN7260 RFM10N45 TA17435 Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,	Original	PDF	RFM10 O204AA) RFM10N45, RFM10N50 AN7254 AN7260. RFM10N50 AN7260 RFM10N45 TA17435
Diode Mark N10 Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334 Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10	Original	PDF	RFM18 RFP18N O204AA, O220AB) RFM18N08, RFM18N10, RFP18N08, RFP18N10 Diode Mark N10 RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
GSM repeater power amplifier module Abstract: DP-36 IMT-2000 RFM1765-10 cdma repeater circuit Text: Power Amplifier RFM1765-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost	Original	PDF	RFM1765-10 DP-36 IMT-2000, GSM repeater power amplifier module DP-36 IMT-2000 RFM1765-10 cdma repeater circuit
RFM12U7X Abstract: No abstract text available Text: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These	Original	PDF	RFM12U7X RFM12U7X
F10N12L Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)	OCR Scan	PDF	RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15
F15N05L Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m	OCR Scan	PDF	RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors

ta9230 Abstract: RFM15N12 RFM15N15 RFP15N12 RFP15N15 ta9195 Text: Standard Power MOSFETs RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m be r 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors 15 A, 120 V — 150 V rDs on : 0.15 fi Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds	OCR Scan	PDF	RFM15N12, RFM15N15, RFP15N12, RFP15N15 RFM15N12 RFM15N15 RFP15N12 RFP15N15* ta9230 RFP15N15 ta9195
RCA 467 Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15 Text: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •	OCR Scan	PDF	RFM10P12, RFM10P15, RFP10P12, RFP10P15 -120V RFM10P12 RFM10P15 RFP10P12 RFP10P15* 2CS-992T3 RCA 467 TA9405 transistor RCA 467 TA9404 TA940 92CS-38272 RFP10P15
f12n10l Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter" Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits	OCR Scan	PDF	RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"
RFM15N05 Abstract: RFP15N05 80a ctc RFP15N06 RFM15N06 Text: G E SOLI» STATE OIE D • 3075001 ODlfllbT 5 ■ GESS Standard Power MOSFETs ' _ RFM15N05, RFM15N06, RFP15N05, RFP15N06 File Number 1478 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	RFM15N05, RFM15N06, RFP15N05, RFP15N06 92CS-3374I RFM15N05 RFM15N06 RFP15N05 RFP15N06* 80a ctc
f12n10l Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F \| BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L	OCR Scan	PDF	01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"
M339 Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15 Text: □1 DE I 3fl7SDfll DDlflim S \| ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi	OCR Scan	PDF	3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192
CS3705 Abstract: RFM10n50 RFM10N45 Text: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *	OCR Scan	PDF	RFM10N45, RFM10N50 RFM10N45 RFM10N50* 92CS-5706I AN-7254 AN-7260. 92CS-37062 J2CS-37063 92CS-37376 CS3705 RFM10n50
TA17435 Abstract: RFM10n50 AN7254 AN7260 RFM10N45 Text: RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 O hm , N-Channel Power M O SFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFM10N45, RFM10N50 RFM10N45 T0-204AA RFM10N45 RFM10N50 TA17435. 50BVnSS AN7254 TA17435 AN7260
Untitled Abstract: No abstract text available Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,	OCR Scan	PDF	RFM12N08, RFM12N10, RFP12N08, RFP12N10 TB334 AN7254 AN7260.
RFP12N08 Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10 Text: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,\| 3Ô 7 S Ü Û 1 DOlfllSB 1 \| _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode	OCR Scan	PDF	RFM12N08, RFM12N10, RFP12N08, RFP12N10 92cs-33t4i RFM12N08 RFM12N10 RFP12N08 RFP12N10 l3fl750fll TA9284

RFM1 Search Results

RFM1 Price and Stock

Ohmite Mfg Co HS25E310RFM145

Ohmite Mfg Co HS50E350RFM145

Ohmite Mfg Co HS50E31RFM145

Ohmite Mfg Co HS100E61RFM193

Ohmite Mfg Co HS100E622RFM193

RFM1 Datasheets (144)

RFM1 Datasheets Context Search

dv4 mosfets

Untitled

Untitled

tx rx module 315mhz

433mhz rx tx module

GSM repeater ic

RFM12-433-D

rfm110

RFM10N50

Diode Mark N10

GSM repeater power amplifier module

RFM12U7X

F10N12L

F15N05L

ta9230

RCA 467

f12n10l

RFM15N05

f12n10l

M339

CS3705

TA17435

Untitled

RFP12N08