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    RFD20N03SM9A Search Results

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    RFD20N03SM9A Price and Stock

    Rochester Electronics LLC RFD20N03SM9A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD20N03SM9A Bulk 355
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    Rochester Electronics LLC RFD20N03SM9AR4761

    MOSFET N-CH 30V 20A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD20N03SM9AR4761 Bulk 683
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    Rochester Electronics LLC RFD20N03SM9AR4770

    MOSFET N-CH 30V 20A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD20N03SM9AR4770 Bulk 355
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    Fairchild Semiconductor Corporation RFD20N03SM9A

    20A, 30V, 0.025 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFD20N03SM9A 4,911 1
    • 1 $0.8126
    • 10 $0.8126
    • 100 $0.7638
    • 1000 $0.6907
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    Fairchild Semiconductor Corporation RFD20N03SM9AR4770

    20A, 30V, 0.025 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFD20N03SM9AR4770 1,578 1
    • 1 $0.8126
    • 10 $0.8126
    • 100 $0.7638
    • 1000 $0.6907
    • 10000 $0.6907
    Buy Now

    RFD20N03SM9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD20N03SM9A Fairchild Semiconductor 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET Original PDF

    RFD20N03SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 4430

    Abstract: 4433 mosfet rfd20n03sm9a RFD20N03 RFD20N03SM TB334 AN9321 AN9322
    Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    PDF RFD20N03, RFD20N03SM RFD20N03 RFD20N03SM TA49235. mosfet 4430 4433 mosfet rfd20n03sm9a TB334 AN9321 AN9322

    D203S

    Abstract: No abstract text available
    Text: RFD20N03, RFD20N03SM Data Sheet Title FD2 03, D20 3S bt A, V, 25 m, anwer OSTs utho July 1999 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs Features The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of


    Original
    PDF RFD20N03, RFD20N03SM 175oC TB334 RFD20N03 RFD20N03SM D203S

    AN9321

    Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
    Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    PDF RFD20N03, RFD20N03SM RFD20N03 RFD20N03SM TA49235. AN9321 AN9322 RFD20N03SM9A TB334 54E-1

    TA49235

    Abstract: 99E-1 rfd20n diode 736
    Text: RFD20N03, RFD20N03SM S E M I C O N D U C T O R 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET November 1997 Features Description • 20A, 30V The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI


    Original
    PDF RFD20N03, RFD20N03SM RFD20N03 RFD20N03SM TA49235. 1-800-4-HARRIS TA49235 99E-1 rfd20n diode 736

    TA49235

    Abstract: 20n03
    Text: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V


    OCR Scan
    PDF RFD20N03, RFD20N03SM TA49235. TA49235 20n03

    Untitled

    Abstract: No abstract text available
    Text: RFD20N03, RFD20N03SM Semiconductor Data Sheet 20A, 30 V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan
    PDF RFD20N03, RFD20N03SM RFD20N03 RFD20N03SM TA49235. 025i2