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    RF POWER AMPLIFIER 1800 MHZ Search Results

    RF POWER AMPLIFIER 1800 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER AMPLIFIER 1800 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF Wireless Products TQ7541 1710 – 1785 MHz High-Efficiency 3-Volt DCS-1800 Power Amplifier The TQ7541 is a high-efficiency power amplifier developed for DCS-1800 handsets operating at the 1710 to 1785 MHz uplink band. The unit provides high-efficiency amplification


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    PDF TQ7541 TQ7541 DCS-1800 TSSOP-20 TQ7621

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz


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    PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4

    Infineon moisture sensitive package

    Abstract: PTMA210152M RO4350 68c21
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63 28ubstances. Infineon moisture sensitive package RO4350 68c21

    PTMA210152M

    Abstract: RO4350 Infineon moisture sensitive package
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead RO4350 Infineon moisture sensitive package

    CD723

    Abstract: No abstract text available
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63 CD723

    PTMA210152

    Abstract: PTMA210152M PCC104bct-nd 210152 PTMA210152M V1 PCC104BCTND RO4350 3224W-202ETR-ND P00ECT-ND PCE3718CT-ND
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PTMA210152 PCC104bct-nd 210152 PTMA210152M V1 PCC104BCTND RO4350 3224W-202ETR-ND P00ECT-ND PCE3718CT-ND

    PTMA180152M

    Abstract: MO 1877 01 MO-166
    Text: Preliminary PTMA180152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2000 MHz PTMA180152M* Package DSO-20-63 Description The PTMA180152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2000 MHz band. This device is offered in


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    PDF PTMA180152M PTMA180152M 15-watt, 20-lead PTMA180152M* DSO-20-63 50-ohm 10-ohm MO 1877 01 MO-166

    GRM422Y5V106Z050AL

    Abstract: PTMA180402M RO4350
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


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    PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50-ohm GRM422Y5V106Z050AL RO4350

    GRM422Y5V106Z050AL

    Abstract: PTMA180402M RO4350 INFINEON 20PIN
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


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    PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 GRM422Y5V106Z050AL RO4350 INFINEON 20PIN

    PTMA180402M V1

    Abstract: GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 PTMA180402M RO4350
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


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    PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 PTMA180402M V1 GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 RO4350

    Untitled

    Abstract: No abstract text available
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


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    PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50ohm

    Untitled

    Abstract: No abstract text available
    Text: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices


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    PDF PTMA180402EL PTMA180402FL PTMA180402EL PTMA180402FL 40-watt, H-33265-8 H-34265-8

    IC 74573

    Abstract: 74573 74573 data sheet datasheet 74573 30304 74573 datasheet M513 MA02206GJ MAAPSS0107 MAAPSS0107SMB
    Text: RoHS Compliant 3.6 V, 0.5 W, RF Power Amplifier IC for DECT 1800 - 2000 MHz Features • • • • • • • • • • • MAAPSS0107 V1 Functional Schematic Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation


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    PDF MAAPSS0107 MA02206GJ MAAPSS0107 IC 74573 74573 74573 data sheet datasheet 74573 30304 74573 datasheet M513 MA02206GJ MAAPSS0107SMB

    J499

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


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    PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 28ances. J499

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


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    PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 pxac201202fc-gr1a

    Untitled

    Abstract: No abstract text available
    Text: PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63

    04749

    Abstract: No abstract text available
    Text: 3.6 V, 0.5 W, RF Power Amplifier IC for DECT, 1800 - 2000 MHz Features MA02206GJ V2 Functional Schematic • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package


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    PDF MA02206GJ MA02206GJ 04749

    Untitled

    Abstract: No abstract text available
    Text: 3.6 V, 0.5 W, RF Power Amplifier IC for DECT, 1800 - 2000 MHz Features MA02206GJ V3 Functional Schematic • • • • • • • Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 - 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package


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    PDF MA02206GJ MA02206GJ

    P 1504 EDG

    Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


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    PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50-ohm P 1504 EDG GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2

    CD723

    Abstract: PCC104BCTND PCC104bct-nd PTMA210152
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63 CD723 PCC104BCTND PCC104bct-nd PTMA210152

    Untitled

    Abstract: No abstract text available
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


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    PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63

    Untitled

    Abstract: No abstract text available
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63

    BGY502

    Abstract: bgy284e BGY288 rf power amplifier 850 MHZ
    Text: BGY288 GSM/GPRS quad-band amplifier Ultra-small RF power amplifier module for mobile phones with integrated power control loop Measuring only 64 mm2, the BGY288 is an ultra-small GSM/GPRS power amplifier module with an accurate, integrated power control loop. Designed for 850, 900, 1800


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    PDF BGY288 BGY288, BGY502 bgy284e rf power amplifier 850 MHZ

    Untitled

    Abstract: No abstract text available
    Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the


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    PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63