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PXAC201202FC Price and Stock

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MACOM PXAC201202FC-V2 RF MOSFET LDMOS 28V H-37248-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PXAC201202FC-V2	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM PXAC201202FC-V2-R0 RF MOSFET LDMOS 28V H-37248-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PXAC201202FC-V2-R0					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	PXAC201202FC-V2-R0					1 - 10 - 100 $65.55 1000 $65.55 10000 $65.55	Get Quote
MACOM PXAC201202FC-V2-R250 RF MOSFET LDMOS 28V H-37248-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PXAC201202FC-V2-R250	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	PXAC201202FC-V2-R250					1 - 10 - 100 - 1000 $62.97 10000 $62.97	Get Quote

PXAC201202FC Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PXAC201202FC-V2		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PXAC201202FC-V2-R0		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4		Original	PDF
PXAC201202FCV2R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4		Original	PDF
PXAC201202FC-V2-R250		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PXAC201202FCV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PXAC201202FCV2XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF

PXAC201202FC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J499 Abstract: No abstract text available Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for	Original	PDF	PXAC201202FC PXAC201202FC 120-watt H-37248-4 28ances. J499
Untitled Abstract: No abstract text available Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for	Original	PDF	PXAC201202FC PXAC201202FC 120-watt H-37248-4 pxac201202fc-gr1a
Untitled Abstract: No abstract text available Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz	Original	PDF	PXAC201202FC PXAC201202FC 120-watt H-37248-4
PTFB090901EA Abstract: No abstract text available Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	PDF	PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA