RF NPN POWER TRANSISTOR 3 GHZ 10W Search Results

RF NPN POWER TRANSISTOR 3 GHZ 10W Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF NPN POWER TRANSISTOR 3 GHZ 10W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PDF	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
PH3134-10M Abstract: RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145 Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PDF	PH3134-10M PH3134-10M RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145
PH3134 Abstract: No abstract text available Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PDF	PH3134-10M PH3134
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	PDF
Untitled Abstract: No abstract text available Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has	Original	PDF
AM83135-050 Abstract: No abstract text available Text: AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	PDF	AM83135-050 AM83135-050
RF NPN POWER TRANSISTOR 3 GHZ 10W Abstract: AM83135-050 Text: AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	PDF	AM83135-050 AM83135-050 RF NPN POWER TRANSISTOR 3 GHZ 10W
tda8510j 2.1 creative amplifiers Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J Text: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��	Original	PDF	PNX1300 PNX1300, PNX1500 SAA6752 tda8510j 2.1 creative amplifiers transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
transistor 9232 Abstract: No abstract text available Text: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n	OCR Scan	PDF	100ns PH3134-10M ATC100A transistor 9232
724 motorola NPN Transistor Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010 Text: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier	OCR Scan	PDF	MRF2010M/D MRF2010M MRF2010M/D 724 motorola NPN Transistor motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	PDF	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	PDF	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

transistor K 2937 Abstract: MJE 340 transistor BFG10 Text: Philips Semiconductors Preliminary specification UHF power transistor PINNING FEATURES • BFG1OW/X To be supplied. PIN DESCRIPTION 1 collector APPLICATIONS 2 emitter • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. 3 base	OCR Scan	PDF	OT343 OT343. 7110fl2fc, 0DT3A33 BFG10W/X transistor K 2937 MJE 340 transistor BFG10
RF NPN POWER TRANSISTOR 3 GHZ 10W Abstract: 2SC4526 P028 Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4526 is a silicon NPN ep itaxial planar typ e transistor specifically designed fo r RF power a m p lifie r applications in 1.65GHz. FEATURES • High pow er gain: Gpb ^ 4.5dB , P0 = 28W	OCR Scan	PDF	2SC4526 65GHz. 65GHz, RF NPN POWER TRANSISTOR 3 GHZ 10W P028
transistor K 2937 Abstract: 367-12 BFG10 lc 7220 Text: Philips Semiconductors Preliminary specification UHF power transistor FEATURES • BFG1OW/X PINNING To be supplied. PIN DESCRIPTION 1 collector APPLICATIONS 2 emitter • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. 3 base	OCR Scan	PDF	BFG10W/X OT343 MSB014 OT343. 711Dfl2b transistor K 2937 367-12 BFG10 lc 7220
Motorola transistors MRF 947 Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797 Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,	OCR Scan	PDF
chw marking sot23 Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON AM831 35-050 m RF & MICROW AVE TR AN SISTO RS S-BAND RADAR APPLICATIONS REFR AC TO R Y/G O LD M ETALLIZATIO N EM ITTER SITE BALLASTED RUG G EDIZED VSW R 3:1 @ 1 dB OVER D R IVE LOW TH E R M A L RESISTANCE INPUT/O UTPUT M ATCHING OVER LAY G EO M ETR Y	OCR Scan	PDF	AM831
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan	PDF
2SK1845 Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511 Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.	OCR Scan	PDF	ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	PDF	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
transistor RCA 383 Abstract: RCA 7163 TA8647 rca 383 transistor RCA H 715 transistor C4 0168 RCA microwave oscillator TA8648 transistor amplifier 1ghz 1500 watts rca h 641 Text: File No. 641 RF Power Transistors Solid State Division 41025 41026 3-W and 10-W 1-GHz E m itter-B allasted Silicon N -P-N O verlay Transistors F o r Use in U H F /M ic ro w a v e C o m m o n -E m itte r Pow er A m p lifie rs , Oscillators, and Freq u en cy M u ltip liers	OCR Scan	PDF	HF-41 RCA-41025 transistor RCA 383 RCA 7163 TA8647 rca 383 transistor RCA H 715 transistor C4 0168 RCA microwave oscillator TA8648 transistor amplifier 1ghz 1500 watts rca h 641

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RF NPN POWER TRANSISTOR 3 GHZ 10W Search Results

RF NPN POWER TRANSISTOR 3 GHZ 10W Result Highlights (5)

RF NPN POWER TRANSISTOR 3 GHZ 10W Datasheets Context Search

BA 7891 NG

PH3134-10M

PH3134

6 pin TRANSISTOR SMD CODE CAA

Untitled

AM83135-050

RF NPN POWER TRANSISTOR 3 GHZ 10W

tda8510j 2.1 creative amplifiers

LE79Q2281

marking code C1E SMD Transistor

transistor 9232

724 motorola NPN Transistor

MSC1002

A5 GNE mosfet

transistor K 2937

RF NPN POWER TRANSISTOR 3 GHZ 10W

transistor K 2937

Motorola transistors MRF 947

chw marking sot23

Untitled

trw RF POWER TRANSISTOR

2SK1845

Transistor 2SA 2SB 2SC 2SD

transistor RCA 383