13MM
Abstract: PH3134-2OL transistor f20 PH3134
Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH3134-2OL
13MM
PH3134-2OL
transistor f20
PH3134
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transistor c36
Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3134-11s
MJLLIMET1344)
transistor c36
wacom
wacom connector
transistor j8
f 9234
transistor B 325
PH3134
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Untitled
Abstract: No abstract text available
Text: PH3134-30S Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-30S
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Untitled
Abstract: No abstract text available
Text: PH3134-25M Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-25M
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Untitled
Abstract: No abstract text available
Text: PH3134-20L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)2.4 Absolute Max. Power Diss. (W)146# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5x @V(CBO) (V) (Test Condition)40
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PH3134-20L
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PH3134-20L
Abstract: J352
Text: PH3134-20L Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-20L
PH3134-20L
J352
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Mallory Capacitor
Abstract: No abstract text available
Text: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH3134-30s
7305025e-01
Mallory Capacitor
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NPN TRANSISTOR Z4
Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Text: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH3134-65M
225t010
iEV-15
NPN TRANSISTOR Z4
b 595 transistor
transistor z4 n
transistor ZY
PH3134-65M
572i
transistor b 595
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Untitled
Abstract: No abstract text available
Text: PH3134-30S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)3.6 Absolute Max. Power Diss. (W)350# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40
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PH3134-30S
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Untitled
Abstract: No abstract text available
Text: PH3134-25M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)159# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40
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PH3134-25M
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PH3134-65M
Abstract: transistor j117
Text: PH3134-65M Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-65M
PH3134-65M
transistor j117
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PH3134-10M
Abstract: RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145
Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-10M
PH3134-10M
RF NPN POWER TRANSISTOR 3 GHZ 10W
RF NPN POWER TRANSISTOR 3 GHZ
J14-5
J-145
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wacom
Abstract: FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor
Text: an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors
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PH3134-55L
73050257-1s
wacom
FI55
PH3134-55L
lcfb
RF NPN POWER TRANSISTOR 2.5 GHZ
340 a transistor
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PH3134
Abstract: No abstract text available
Text: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-10M
PH3134
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PH3134-9L
Abstract: No abstract text available
Text: PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-9L
PH3134-9L
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Untitled
Abstract: No abstract text available
Text: PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH3134-9L
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transistor 9232
Abstract: No abstract text available
Text: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n
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100ns
PH3134-10M
ATC100A
transistor 9232
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Untitled
Abstract: No abstract text available
Text: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features • • • • • • • • N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry
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PH3134-65M
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PH3134-75S
Abstract: No abstract text available
Text: an AM P company Radar Pulsed Power Transistor, 75W, 1jxs Pulse, 10% Duty 3.1 • 3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3134-75S
2-j11
PH3134-75S
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L930
Abstract: No abstract text available
Text: w art A M P c o m p a n y Radar Pulsed Power Transistor, 65W, 100 is Pulse, 10% Duty 3.1-3.4 GHz PH3134-65M Features • NPN Silicon M icrow ave P o w er T ran sisto r • C o m m o n B ase C o n figu ratio n • B ro ad b an d C lass C O peratio n • •
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PH3134-65M
L930
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ST 9241
Abstract: No abstract text available
Text: M m antA ccompany o ti AMP Radar Pulsed Power Transistor, 30W, 1ns Pulse, 10% Duty 3.1-3.4 GHz PH3134-30S V2.00 Features • • • • • • • • CrV ÜC> NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadban d C lass C O p eratio n
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PH3134-30S
TT50M50A
ATC100A
ST 9241
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Untitled
Abstract: No abstract text available
Text: MùkCfm W an A M P com pany Radar Pulsed Power Transistor, 20W, 300ns Pulse, 10% Duty 3.1 - 3.4 GHZ PH3134-20L Features • N I'N S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n
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300ns
PH3134-20L
TT50M50A
ATC100A
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transistor j117
Abstract: j76 transistor CC-36 J1171 J117
Text: AfaCCM W an A M P company Radar Pulsed Power Transistor, 75W, 1jis Pulse, 10% Duty 3.1-3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry
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PH3134-75S
transistor j117
j76 transistor
CC-36
J1171
J117
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Untitled
Abstract: No abstract text available
Text: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n
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PH3134-11S
ATC100A
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